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  • 1
    Electronic Resource
    Electronic Resource
    Photoinduced hysteresis changes and optical storage in (Pb,La)(Zr,Ti)O3 thin films and ceramics (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4305-4315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 thin films and bulk ceramics are shown to exhibit two distinct, but related types of photoinduced changes in their hysteresis behavior: (1) a photoinduced suppression of the switchable polarization and (2) a photoinduced voltage shift. Both effects give rise to stable and reproducible hysteresis changes and, thus, either could be the basis of an optical memory. Both phenomena can be explained by trapping of photogenerated charge at domain boundaries to minimize internal depolarizing fields. The space-charge field that causes the voltage-shift effect is primarily due to the migration and subsequent trapping of electrons. However, the thickness dependence of the voltage shift implies that the trapped charge is not confined to the interface. The voltage-shift kinetics exhibit a stretched-exponential dependence, whereas the polarization-suppression effect follows an exponential time dependence. However, both effects exhibit similar relaxation times. In addition, the relaxation time for the voltage-shift effect decreases with increasing light intensity according to a power-law relationship, τ∝I−n, where 0.67〈n〈0.75.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357316
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  • 2
    Electronic Resource
    Electronic Resource
    Dynamic self-organization of strained islands during SiGe epitaxial growth (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 951-953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dynamic self-organization of coherently strained islands during SiGe molecular beam epitaxy on Si(001) is measured in real time using a novel spectroscopic light scattering technique. We show that an array of hut clusters self-orders on a square mesh with increasing areal coverage. Ordering occurs to minimize the repulsive elastic interactions between neighboring islands. Self-organization breaks down when islands coalesce during deposition or during static coarsening. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122049
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  • 3
    Electronic Resource
    Electronic Resource
    Electro-optical characterization of Pb(Zr,Ti)O3 thin films by waveguide refractometry (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2180-2182 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric field-induced changes in the extraordinary and ordinary refractive indices of a Pb(Zr0.53Ti0.47)O3 thin film were independently determined using waveguide refractometry. Under an electric field, applied normal to the film plane and corresponding to saturation of the electric polarization, the ratio of the extraordinary to ordinary refractive index change (Δne/Δno) is found to be −4/1, contributing to a net birefringence change [Δ(ne-no)] of −0.021. Using this technique, both diagonal and off-diagonal elements of the electro-optic response tensor describing the macroscopic behavior of the polycrystalline film were accessed, illustrating the importance of this approach in evaluating orientation-specific electro-optic characteristics in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110576
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  • 4
    Electronic Resource
    Electronic Resource
    Spectrally and temporally resolved laser emission from vertical cavity surface emitting lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 662-664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The laser emission spectra of several vertical cavity surface emitting lasers, following pulsed laser excitation, have been measured with a temporal resolution of 〈1 ps. With broadband excitation, emission was observed from multiple longitudinal modes when pumped well above threshold. The output-pulse decay times of modes located near the edges of the high reflecting zone were significantly shorter than the decay times of modes located near zone center. The zone-edge modes were not observed when narrow-band photoexcitation was used, indicating that broadband excitation results in seeding of the laser cavity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114091
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  • 5
    Electronic Resource
    Electronic Resource
    Electron and hole mobility in tris(8-hydroxyquinolinolato-N1,O8) aluminum (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3618-3620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the drift mobility of electrons and holes in thin, vapor-deposited films of tris(8-hydroxyquinolinolato-N1,O8) aluminum using a time of flight photoconductivity technique. The drift of mobility of both carriers is dispersive and strongly electric field and temperature dependent. At ambient temperature and an electric field of 4×105 V cm−1, the effective mobility of electrons and holes is 1.4×10−6 and 2×10−8 cm2 V−1 s−1, respectively, in a 400 nm thick sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113806
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  • 6
    Electronic Resource
    Electronic Resource
    Transient photoinduced absorption in (AlxGa1−x)0.5In0.5P fractal quantum well heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 966-968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond photoinduced absorption measurements have been performed on four different (AlxGa1−x)0.5In0.5P fractal quantum well heterostructures. The results of these measurements reveal that, at early times following pulsed excitation, the carriers remain near the surface layer in which they were photogenerated, and populate the higher lying branches of the V-shaped fractal structure. With increasing time, the carrier population relaxes toward the lowest energy, central wall. The rate at which the relaxation occurs is governed by the characteristic layer of widths of the fractal structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117097
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    Paper (German National Licenses)
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