Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2574-2575
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Conduction and valence band discontinuities were determined in the strained AlxIn1−xP/InP heterojunction system by absorption measurements from multiquantum well (MQW) and superlattice (SL) structures. It was found that the conduction band offsets were 0.337 and 0.260 eV for systems having Al concentrations of x=0.20 (MQW) and x=0.15 (SL), respectively. The valence band discontinuities were 85 and 49 meV for the heavy-hole valence band and −29 and −35 meV for the light-hole valence band, respectively, i.e., the light-hole valence band of AlxIn1−xP forms a staggered type II heterojunction with InP. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112643
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