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  • 1
    Electronic Resource
    Electronic Resource
    Grain growth and grain size distributions in thin germanium films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2492-2497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed and characterized normal and secondary grain growth in thin films of germanium on silicon dioxide. Films were deposited on thermally oxidized silicon wafers, encapsulated with 1000-A(ring)-thick sputtered SiO2 films and annealed in evacuated ampoules at 900 and 915 °C. After 5 min, the films had developed a columnar grain structure as a result of normal grain growth. The grain size distributions were lognormal with mean grain diameters of about 2.5 times the film thickness. The standard deviation of the normal grain size distribution did not change significantly with annealing time and temperature. Secondary grain growth, which can lead to grains that are much larger than the film thickness, occurred in films that were annealed for longer periods of time. The normal grain size distribution remained stationary, i.e., the peak height and width did not increase with annealing time. Secondary grains were few in number compared to normal grains, and were manifest as a small tail on the normal grain size distribution. The rate of secondary grain growth was constant and largest in the thinnest films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339460
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of aspect ratio on the magnetic anisotropy of particle arrays (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5120-5122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arrays of evaporated nickel particles with a variety of diameters (75–122 nm) and aspect ratios are fabricated in order to study the effect of the particles' geometry on their magnetic behavior, interactions and switching mechanism. Hysteresis loops generated by simulating single-domain particles with out-of-plane magnetization are compared to the experimentally obtained data. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373268
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1152-1160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the morphology and crystallographic angular discontinuities of subboundaries and defect trails in zone-melting-recrystallized Si films. These subboundaries and defect trails, which originate at the interior corners of the faceted solidification front, are classified into seven types. Evidence is presented that in-plane stress due to temperature gradients plays a major role in causing such defects. Various schemes for entraining subboundaries and defect trails are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337360
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-bombardment-enhanced grain growth in germanium, silicon, and gold thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2337-2353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grain growth has been studied in polycrystalline thin films of Ge, Si, and Au during ion bombardment. The phenomenon has been characterized by varying the ion dose, ion energy, ion flux, ion species, substrate temperature, and thin-film deposition conditions. Films bombarded with Si+, Ar+, Ge+, Kr+, and Xe+ exhibited enhanced grain growth which was weakly temperature dependent and proportional to the energy deposited in elastic collisions at or very near grain boundaries. The effect of these parameters on grain size and microstructure was analyzed both qualitatively and quantitatively using transmission electron microscopy. A transition state model describing the motion of grain boundaries during ion bombardment has been applied to the present experimental data. The results suggest that bombardment-enhanced grain growth may be due to thermal migration of bombardment-generated defects across the boundary. The calculated defect yield per incident ion was found to be directly related to enhanced grain growth, and was used to estimate the number of atomic jumps at the grain boundary per defect generated. Grain growth rates during bombardment and thermal annealing were related to their respective point defect populations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341665
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  • 5
    Electronic Resource
    Electronic Resource
    Surface-energy-driven grain growth during rapid thermal annealing (〈10 s) of thin silicon films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1652-1655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface-energy-driven grain growth in 70-nm-thick phosphorus-doped Si films is reported for anneals of less than 10 s over a temperature range of ∼1100 to 1225 °C. Secondary grains grow to sizes of 1 μm or larger and have (111) crystallographic texture, indicating surface energy minimization. A kinetic analysis of grain growth suggests that while the rate of grain boundary motion is limited by P diffusion, the initial growth rate can be high, 72 nm/s at 1100 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338055
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  • 6
    Electronic Resource
    Electronic Resource
    Far-infrared emission from hot quasi-one-dimensional quantum wires in GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed far-infrared radiation from an array of hot quasi-one-dimensional wires in GaAs. The wires have 6000 A(ring) period with 3000 A(ring) lithographic width. Spectroscopy of the infrared emission with a bolometer detector filtered by a magnetic field-tunable InSb cyclotron resonance wedge reveals: an intersubband plasmon resonance at 45 cm−1, and a measure of the resonance linewidth and electron temperature as a function of pulse current. The total intensity of the infrared signal yields a confirming measure of the temperature of the electrons, ranging from 6.0 to 12.1 K for currents of 40 nA to 2 μA per wire. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114735
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  • 7
    Electronic Resource
    Electronic Resource
    Guiding-center-drift resonance of two-dimensional electrons in a grid-gate superlattice potential (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2945-2947 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the low-field magnetoresistance of the two-dimensional electron gas in GaAs/〈m1;&33〉AlxGa1−xAs in the presence of a two-dimensional lateral surface superlattice (2D LSSL) potential, and observed, for the first time, the guiding-center drift resonance, previously reported for one-dimensional LSSL structures. The 2D LSSL potential is created by applying a voltage Vg to a 200 nm period grid-gate structure fabricated on top of the sample and can be tuned continuously from being repulsive to attractive by tuning Vg.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104730
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  • 8
    Electronic Resource
    Electronic Resource
    Large-area mosaic diamond films approaching single-crystal quality (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2485-2487 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The seeding for large-area mosaic diamond films approaching single-crystal quality is described. The technique includes patterned etching of relief structures in Si substrates, deposition from a slurry and orientation of macroscopic diamond seed crystals in the structures, and chemical vapor deposition overgrowth of the diamond seeds to form a continuous film. The film comprises ∼100 μm single crystals, which are separated by low-angle grain boundaries of a few degrees or less. We believe that these low-angle grain boundaries will not affect the electrical properties of majority-carrier devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104851
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial grain growth in thin metal films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4099-4104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial alignment has been obtained by means of grain growth in polycrystalline films deposited on single-crystal substrates. A theory for epitaxial grain growth is outlined and results given for experiments on Au, Al, Cu, and Ag films on vacuum-cleaved NaCl, KBr, KCl, or mica. Epitaxial grain growth provides a fundamentally different alternative to conventional epitaxy, and can lead to very thin films with improved continuity and crystalline perfection, as well as non-lattice-matched orientations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344969
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  • 10
    Electronic Resource
    Electronic Resource
    Patterning and characterization of large-area quantum wire arrays (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1539-1541 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-area arrays of parallel quantum wires of 30–80 nm width are achieved using a combination of x-ray lithography, wet chemical etching, and low-pressure metalorganic vapor phase epitaxy. The quantum wires are characterized using low-temperature photoluminescence and magnetotransport measurements. The quantum confinement is reflected in a clear blue shift in the luminescence peak, and in deviation from the periodicity of the Shubnikov–de Haas oscillations as a function of inverse magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105171
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