ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
The influence of different transparent conducting oxides (TCO) on the transverse photoelectrical properties of one-dimensional position sensitive detectors based on p-i-n amorphous silicon structures was studied. For both SnO2 and indium tin oxide, poor quality of the p layer was revealed by secondary ion mass spectroscopy measurements. Good agreement between experimental and simulation characteristics of TCO/p-i-n structure was additionally conditioned by a strong increase in defect states at the p layer surface which can be attributed to the reduction/oxidation process at the TCO/p interface. However, the analysis showed that under reverse bias the spectral response of the p-i-n structure is not significantly affected by different TCO layers and conditions at the TCO/p heterojunction. Nevertheless, indium tin oxide is less appropriate for a front TCO layer due to the poor reverse dark current-voltage characteristic, i.e., higher leakage current component leading to lower signal to noise ratio. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1147946
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