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  • 1
    Electronic Resource
    Electronic Resource
    A thin-film Schottky diode fabricated from flame-grown diamond (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5144-5146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky diodes have been fabricated out of polycrystalline diamond thin films grown in an atmospheric pressure turbulent flame. Doping was accomplished by bubbling the source gas through a solution of diboric trioxide in acetone. The diodes were grown on metallic, noncrystalline substrates. A device fabrication technique utilizing carbide-forming refractory metals as a buffer layer was used to bond the diamond film to the substrate and act as an ohmic contact. The resulting structure avoided the difficulties in flame growth of working with thin detached films. Diode rectification ratios in excess of 300 were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348992
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  • 2
    Electronic Resource
    Electronic Resource
    Studies of turbulent oxyacetylene flames used for diamond growth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 755-759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Turbulence in the flame of an oxyacetylene torch used for diamond growth was studied with mass spectrometry and dark-field shadowgraphy. H2, CO, N2, and C2H2 were observed in both laminar and turbulent diamond growing flames, while O2, CO2, and H2O were detected in only the turbulent flame. Dark-field shadowgraphs showed a broken, changing flame front in the turbulent flame, although the boundary layer remained laminar under all flow conditions. The broken flame front suggests that unburned gases are passing through the turbulent flame front to form the detected oxidation products. A model is proposed in which the gas phase environment above the surface in turbulent flame diamond growth oscillates between oxidizing and reducing conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353333
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  • 3
    Electronic Resource
    Electronic Resource
    Diamond synthesis in oxygen-acetylene flames: Inhomogeneities and the effects of hydrogen addition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2602-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micro-Raman spectroscopy, scanning electron microscopy and a surface density counting technique have been used to probe the inhomogeneities of diamond crystallites grown with an oxygen-acetylene flame on a scratched Si(100) surface. The surface temperature profile was measured using a thermal imaging camera and compared with the observed inhomogeneities in the diamond crystallites. It is concluded that the flame species flux to the surface is the dominant factor contributing to the diamond crystallite inhomogeneities. Hydrogen addition to the oxygen-acetylene flame was studied. The addition of hydrogen reduced the amount of "amorphous'' carbon contained in the diamond crystallites as measured with Raman spectroscopy. Growth density profiles were determined as a function of the inner flame front to substrate distance. For uniform growth density in the oxygen-acetylene flame the substrate must be placed in the acetylene feather at a sufficient distance from the inner flame to avoid annular growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348651
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  • 4
    Electronic Resource
    Electronic Resource
    Diamond growth in turbulent oxygen-acetylene flames (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7561-7571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Turbulent premixed oxygen-acetylene flames have been used to synthesize polycrystalline diamond films on molybdenum substrates at temperatures ranging from 500 to 1300 °C and facetted single crystals on mm-sized natural diamond substrates at temperatures of 1200–1300 °C. Turbulence was achieved by increasing the torch's orifice diameter and/or the flow velocity; the presence of turbulence was confirmed by observations of changes in the flame shape, measurements of the flame's noise spectrum, and calculations of the Reynolds number. The optical emission spectra of several diamond-growing turbulent flames were also compared to the spectra of laminar flames. The variation in diamond quality with temperature and oxygen acetylene flow ratio was studied with one or more of the following techniques: Raman spectroscopy, scanning and transmission electron microscopy, infrared spectroscopy, and photoluminescence spectroscopy. Crystals grown on molybdenum at temperatures of 600–1100 °C were observed to be transparent, and under the proper conditions the quality of diamond grown epitaxially in a turbulent flame equals that of natural type-IIa diamond. Although this enhanced quality has only been observed for fairly lean flames, the growth rate for type-IIa quality diamonds can still exceed 35 μm/h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354982
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  • 5
    Electronic Resource
    Electronic Resource
    Growth rate and quality variation of homoepitaxial diamond grown at elevated temperatures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 641-645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films were grown at temperatures between 1000 and 1400 °C with an oxy-acetylene torch. The growth rates of the {100} and {111} faces were observed to increase through 1400 °C, while the {110} face did not grow above 1400 °C. The quality of all faces deteriorated significantly between 1300 and 1400 °C, as shown by scanning electron microscopy and Raman spectroscopy. The transparency of a film as measured by Fourier-transform infrared spectroscopy was type-IIa quality with very little C–H absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359518
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  • 6
    Electronic Resource
    Electronic Resource
    Admittance spectroscopy of boron doped diamond (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 181-183 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The boron acceptor level in diamond was investigated using admittance spectroscopy. The conductance of a flame grown sample was measured between 125 and 200 K at five frequencies between 0.1 and 5.0 kHz using a 16.0 mV ac signal applied across a Schottky diode at zero dc bias. The admittance spectroscopy technique yielded a deep impurity level of 0.33 eV. From the same set of data, a hole capture cross section of 2×10−12 cm2 was also measured. The cross section reported here is assumed to be caused by ionized boron acceptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109332
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  • 7
    Electronic Resource
    Electronic Resource
    Electron beam modification of the Schottky diode characteristics of diamond (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 429-431 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron beam irradiation from a scanning electron microscope has been shown to improve the rectification characteristics of a boron doped diamond sample, as evidenced by measurement of a lowered reverse current in Al Schottky diodes. The sample processing procedure consisted of cleaning in heated CrO3/H2SO4 and NH4OH/H2O2 mixtures, exposure to an electron beam, a post-exposure cleaning in NH4OH/H2O2, and metallization. Since published information on the effect of CrO3/H2SO4 and NH4OH/H2O2 mixtures on the diamond surface is lacking, we hypothesize that the exposure of the diamond surface to an electron beam releases hydrogen from the surface, while the post-irradiation clean in boiling NH4OH/H2O2 may oxygenate the diamond surface. This result is consistent with previous work which demonstrated that annealing in hydrogen and oxygen ambients affected the surface resistance of diamond. These results indicate a high surface resistance is necessary to form good Schottky junctions in diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107904
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of hydrogen addition and growth-etch cycling on the oxy-acetylene torch deposition of homoepitaxial diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1839-1840 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films were deposited onto (110) single crystal substrates using oxy-acetylene torch deposition at a constant substrate temperature of 1150 °C. Growth-etch cycling of the deposition increased the linear growth rates of the (100) and (111) faces by a factor of 2. The growth-etch films were shown to be less transparent in the infrared than the reference depositions as determined by microfocus Fourier transform infrared spectroscopy. Using the growth-etch technique, the growth rates of the (100), (111), and (110) faces decreased with increasing hydrogen addition to the combustion flame for hydrogen flow rates up to 50% of the acetylene flow rate. The additional hydrogen did not improve the growth-etch films' transparency. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115420
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