ISSN:
1573-8663
Keywords:
ferroelectric memories
;
integrated ferroelectrics
;
embedded microcontrollers
;
ferroelectric material and integration
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract This paper describes the general aspects of embedding Ferroelectric Memories (FeRAMs) with logic circuits and/or microcontrollers. These devices and stand-alone memories constitute the main thrust of applications of ferroelectric memories. The problems associated with embedding test the robustness and compatibility of the FeRAM process with established CMOS integrated circuits. As integrated circuits technology advances in lithography, FeRAMs meet the challenge, but new problems appear. In this review, existing embedded FeRAMs of the 0.8/0.6 μ generation will be discussed. A program for the 0.35/0.25 μ generation, and the 0.18 μ challenges are outlined and addressed. The paper also reviews the application of FeRAM Smart Cards. This application is becoming the best example of embedded FeRAMs in which to demonstrate the “System-One-Chip” technology direction. Smart Card ICs clearly take advantage of the low power, high-write speed and long endurance characteristics of Ferroelectric Memories.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009991026077
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