ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, we investigated the effect of crystal defects on reverse I-V characteristics ofavalanche photodiodes (APDs) using electron-beam induced current (EBIC) mode of SEM. Twotypes of SiC APD structures (I and II) were fabricated using 2 inch p-doped substrates with n-dopedepilayers and 3 inch n-doped substrates with p- and n- epilayers. Areas of the formed diodes wereapproximately 1 mm2. The devices without any kind of electrically active 3-D structural defectsdemonstrated breakdown voltages close to theoretical values, ~500 V for the APD Type I and~1200 V for Type II APD. Stability of Type I devices was tested by applying a short pulse of highvoltage (~800 V). EBIC images, taken prior to and after the failure test, showed new defects in thedislocation free area, which, presumably, were caused by thermal breakdown
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.427.pdf
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