Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1861-1862
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low-pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101260
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