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  • 1
    Electronic Resource
    Electronic Resource
    Changes in the growth mode of low temperature GaN buffer layers with nitrogen plasma nitridation of sapphire substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1228-1230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature GaN buffer layers were grown by remote plasma enhanced metalorganic chemical vapor deposition on various pretreated sapphire substrates. The effects of the initial nitridation of sapphire substrates by rf nitrogen plasma on the subsequent growth mode and the crystallinity of the GaN buffer layers were studied. GaN buffer layers on non-nitridated sapphire substrates showed a three-dimensional island growth mode with rough surfaces and misoriented islands. On the other hand, those grown on nitridated sapphire substrates showed an enhanced two-dimensional growth mode with near-equilibrium truncated hexagonal pyramids. The structural quality of the low temperature GaN buffer layer improved significantly with nitrogen plasma nitridation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119859
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1−xN quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3242-3244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micro-photoluminescence (PL) spectra of Si-doped GaN epilayers and three-period In0.1Ga0.9N/In0.02Ga0.98N:Si quantum-well (QW) structures were studied and compared with macro-PL spectra. The shift of the macro-PL peak with increasing Si concentration was found to be similar to that with increasing excitation density in both GaN:Si and InxGa1−xN QWs. Also, it was observed that the macro-PL intensity increased with increasing Si concentration in GaN:Si and InxGa1−xN QWs, but the micro-PL intensity was independent of doping concentration. These results indicate that the changes of PL spectra with Si doping are mainly due to the increase of carriers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126594
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    Paper (German National Licenses)
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