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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2784-2786 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4188-4190 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1860-1866 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and vibrational properties of device quality pure GaN substrate grown using a lateral epitaxial overgrowth (LEO) technique were studied using x-ray diffraction, Brillouin, Raman, and infrared spectroscopy. Lattice constants were found to be a=3.1896±0.0002 Å and c=5.1855±0.0002 Å. Comparing the results with those on GaN epilayer directly grown on sapphire substrate, it is shown that the GaN substrate is indeed of high quality, i.e., the lattice is relaxed. However the GaN substrate has a small enough but finite residual strain arising from the pileup of the lateral growth front on SiO2 masks in the course of LEO. It was also found that the elastic stiffness constants C13 and C44, are more sensitive to the residual strain than the optical phonon frequencies. The high frequency and static dielectric constants were found to be 5.14 and 9.04. The Born and Callen effective charges were found to be 2.56 and 0.50. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3766-3768 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3329-3331 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 454-456 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photogenerated carrier dynamics in an AlGaN/GaN single quantum well has been studied using a conventional degenerate pump and probe technique at room temperature. Photoinduced absorption at the exciton resonance has been observed. It is explained by the absorption coefficient change, through the quantum-confined Stark effect and the quantum-confined Franz–Keldish effect, caused by the photoinduced internal electric-field screening. In comparison with biased GaAs multiple quantum wells, a slower time evolution of differential transmission signals has been also found. Its origin is attributed to the longer carrier sweep-out time due to the potential profile of the sample in conjunction with the longer carrier recombination time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Entomologia experimentalis et applicata 63 (1992), S. 155-161 
    ISSN: 1570-7458
    Keywords: Aedes ; Stegomyia ; egg diapause ; survival time ; desiccation resistance ; habitat selection
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Survival in three humidity conditions was studied for diapause and non-diapause eggs of 4 species of Aedes (Stegomyia) mosquitoes which use small containers as larvae. In general, diapause eggs survived longer than did non-diapause eggs. Diapause eggs of A. albopictus, which prefers containers in disturbed habitats outside forests for oviposition, were more resistant to severe desiccation than those of forest species (A. riversi, A. galloisi, A. flavopictus). Desiccation resistance during hibernation is apparently related to the risks associated with different habitats.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1437-5613
    Keywords: Key words Climatic adaptation ; Carabid beetles ; Interspecific interaction ; Character displacement ; Geographic variation ; Sexual dimorphism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Geographic variation and interspecific differentiation in body size (body length) were analyzed for 15 species of the carabid subgenus Ohomopterus (genus Carabus; Coleoptera, Carabidae) in Japan. Local species assemblages of this subgenus consist of up to 5 species of different size classes. These beetles exhibited sexual dimorphism in body size where females are larger than males, except Carabus uenoi, in which the male and female sizes were equivalent, possibly because of the exaggerated male genitalia. In 9 of 15 species, there was a positive correlation between mean body size and annual mean temperature of habitat, representing the converse of Bergmann's rule. However, in some cases this correlation does not hold over the range of a species because of regional differences. When allopatric and sympatric populations were compared, allopatric populations of Carabus albrechti and C. japonicus had larger bodies than sympatric populations. These intraspecific differences may have resulted from character displacement. In each local assemblage with 2 or more species, there was little interspecific overlap of body size, although the body size ratio between two species with adjacent body sizes seldom showed strict constancy. The mean size ratio between 2 adjacent species in an assemblage was reduced with the number of species, whereas the size ratio of the largest to smallest species in an assemblage increased with the number of species (i.e., the expansion of body size range). These results indicate that the body size of Ohomopterus species may have evolved in response to both climatic conditions and interspecific interactions. Because each species or species group represents the same size class over the distribution range and similar-sized species are parapatric or allopatric, the interspecific segregation in body size in local assemblages may have resulted mainly from a size assortment process during colonization.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-1939
    Keywords: Mosquito egg ; Survival time ; Desiccation tolerance ; Climatic adaptation ; Habitat selection
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Survival times of eggs under three humidity conditions (42%, 68%, 88% RH) were investigated among Aedes (Stegomyia) mosquitoes from temperate and tropical zones (5 species and 20 geographical strains). This subgenus tends to occupy small aquatic sites as larvae, where desiccation resistance of eggs is necessary during habitat drought. Interspecific comparison showed that the egg survival time was correlated with egg volume and dryness of source locality, and probably with habitat. Aedes aegypti is associated most with arid climate and human-disturbed habitats — its large eggs survived the longest periods at all humidities. Aedes albopictus ranges from tropics to temperate zones and inhabits both disturbed and forest habitats — its eggs were less desiccation-resistant than A. aegypti eggs. The survival times for forest species eggs (A. riversi, A. galloisi, A. flavopictus) were variable at high humidities but at the lowest humidity were consistently shorter than for eggs of A. aegypti and A. albopictus.
    Type of Medium: Electronic Resource
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