Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 748-751
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on an investigation of the growth mechanisms of HgTe using a combination of reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The experiments were carried out on untilted (001) CdTe substrates. Growth rates were determined from RHEED intensity oscillations of the (00) specular spot reflection. The amplitude of these oscillations decrease with increasing substrate temperature. Above 178 °C no RHEED oscillations could be measured. Upon reducing the sample temperature below 178 °C these oscillations could again be observed. This cyclic behavior could be induced several times for each sample, indicating a reversible change in the growth mechanism. In order to correlate the surface structure with RHEED observations, several samples have been investigated with STM. Thus, it could be confirmed that a temperature dependent transition occurs during the MBE growth of HgTe from the island growth mode below the critical temperature of 178 °C to a step flow mode above this temperature. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362682
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