Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 1449-1451
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CdTe (111)B films with a 5 in. diameter have been grown on Si (100) substrates. They were characterized by in situ electron diffraction, x-ray diffraction, and low-temperature photoluminescence. The layer thickness was measured across two diameters with infrared transmission, and a standard deviation of 2.3% is obtained. This demonstrates the possibility of producing CdTe layers with a 5 in. diameter with excellent uniformity in terms of thickness and crystalline quality. Moreover, this demonstrates the potential for molecular beam epitaxial growth of other materials on large-area substrates. In fact, these are the largest monocrystalline layers of a II-VI semiconductor material ever grown by any technique.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103366
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