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  • 1
    Electronic Resource
    Electronic Resource
    Tunneling through ultrathin SiO2 gate oxides from microscopic models (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 348-363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate theoretically coherent electron tunneling through three-dimensional microscopic Si[100]/SiO2/Si[100] model junctions with oxide thicknesses between 0.4 and 4.6 nm. The transmission probabilities of these structures were calculated using a semiempirical tight-binding scattering method. Our calculations provide a basis for the microscopic understanding of the observed independence of tunneling transmission on the orientation of the bulk silicon and on the nature of inelastic defect-assisted tunneling. We document significant differences between transmission coefficients obtained with the present scheme and with the popular effective-mass-based approaches. The energy dependence of the effective tunneling mass in bulk silicon dioxide is predicted. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330764
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  • 2
    Electronic Resource
    Electronic Resource
    Effective-mass enhancement and nonparabolicity in thin GaAs quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6945-6947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study size quantization effects on the conduction band dispersion in GaAs/AlAs quantum wells using a semiempirical tight-binding method. For GaAs well thicknesses between 3 and 11 nm, we find a significant increase of the conduction band mass of up to 50% compared with bulk GaAs. Concomitantly, the confinement reduces the highest achievable group velocities for electrons in the Γ conduction valley of the well by up to 30%. We discuss some of the consequences for quantum-well-based devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321773
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  • 3
    Electronic Resource
    Electronic Resource
    Distributions of light ions and foil destruction after irradiation of organic polymers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 668-676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that light ions (6Li, 10B) distribute neither according to their calculated range nor to their nuclear damage distributions but according to their ionization distributions after implantation into organic polymers. Also, the profile of chemical destruction after low dose light ion implantation (typically 1012–1014 ions/cm2) into organic foils obeys the ionization distribution rather than the range or nuclear damage distributions. After annealing, or at higher implanted doses, a slight shift of the implantation or destruction profiles towards the nuclear damage distribution is found. The reason for this implantation behavior may be partly understood in terms of diffusion and subsequent recombination with the created radicals. Li and B distributions in carbon (which may be regarded as the final product of polymer destruction) show a shape which can be described by range profiles with subsequent diffusion and trapping at homogeneously distributed defects. In contrast to light ions, implanted heavy ions distribute in polymers essentially according to their range profiles, due to negligible diffusion after implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336180
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    Paper (German National Licenses)
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