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  • 1
    Electronic Resource
    Electronic Resource
    Photoreflectance of semi-insulating InP: Resistivity effects on the exciton phase (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2824-2826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that photoreflectance (PR), a contactless form of modulation spectroscopy, can be used to measure the resistivity of semi-insulating InP:Fe substrates. PR measurements of the substrates, obtained from various vendors and laboratories, were performed at 82 K and had line shapes dominated by excitonic transitions. The phase angle of the line shape was found to be a measure of the bulk resistivity of the substrate. The behavior of the line shape phase angle is explained by the exciton ionization model, where the electric field near the surface of the sample is sufficient to ionize excitons. The extent of this ionizing electric field corresponds to an optical path length which enters additively into the exciton line shape phase. Samples with higher resistivities have ionizing electric fields of larger extent, increasing the phase angle of the exciton line shape.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104748
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  • 2
    Electronic Resource
    Electronic Resource
    High-mobility InSb grown by organometallic vapor phase epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The highest mobility InSb epilayer grown to date by organometallic vapor phase epitaxy has been achieved by utilizing high-purity organometallic sources, choosing a reactor geometry to reproducibly control the source concentrations above the substrate, and using a high- integrity reactor system. On a p-type InSb substrate, an unintentionally doped layer had a 77 K n-type carrier concentration and mobility of 1.4×1015 cm−3 and 2.53×105 cm2/V s. Growths on GaAs substrates were greatly affected by the lattice mismatch and had 77 K carrier concentrations similar to the InSb case but with mobilities of (5.0–9.0)×104 cm2/V s. The crystal quality, morphology, and cyclotron resonance characteristics are reported and found to be comparable to state-of-the-art molecular beam epitaxy layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105069
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimony (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1311-1313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InSb has been grown by organometallic vapor phase epitaxy using triisopropylantimony (TIPSb) and trimethylindium (TMIn) at temperatures as low as 300 °C, the lowest yet reported for a stable Sb source. Unintentionally doped films were n type, and the best electronic transport result was obtained for a growth at 350 °C yielding a 77 K carrier concentration of 3.7×1016 cm−3 and mobility of 6.3×104 cm2/V s; these impurities are thought to be from the reagent grade chemicals used to synthesize the TIPSb. The morphology, growth rate, and transport properties of these films are reported as a function of growth temperature, molar ratios, and substrate (GaAs or InSb). By comparing these transport properties with Hall measurements of ∼1 μm InSb epilayers on GaAs grown from trimethylantimony and TMIn, it was found that these properties were greatly improved because of the low-temperature epitaxy enabled by this source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104346
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  • 4
    Electronic Resource
    Electronic Resource
    Second harmonic generation from beta barium borate (β-BaB2O4) thin films grown by metalorganic chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 565-567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of beta barium borate (β-BaB2O4) have been deposited by metalorganic chemical vapor deposition on fused silica, sapphire, platinum, and silicon substrates. Deposition conditions were optimized to reproducibly grow films with the c axis normal to the substrate. Second harmonic generation measurements have been made on selected films. The films grown on fused silica exhibit a maximum χeff(2) of 0.78 pm/V, and on single-crystal sapphire, 1.6 pm/V. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118209
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  • 5
    Electronic Resource
    Electronic Resource
    Stability and decomposition of gaseous allylcyclopentadienylpalladium (1989)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 749-753 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100339a048
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