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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3833-3837 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel technique for the production of expansion-cooled cluster beams from materials with low vapor pressure is presented. The clusters are produced in a flow reactor from gas phase reactants by aggregation of CO2-laser-induced decomposition products. By introducing a conical nozzle into the reaction zone, they are extracted into a molecular beam apparatus and analyzed with a time-of-flight mass spectrometer. Depending on the type of CO2-laser employed, the source can be operated in the pulsed or continuous mode. The generation of carbon and silicon clusters is demonstrated by decomposing gaseous C2H2 and SiH4, respectively. The laser-driven cluster course is also employed to generate fullerenes and nanosized silicon particles. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5302-5306 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon clusters have been generated by CO2-laser-induced decomposition of SiH4 in a flow reactor. By introducing a conical nozzle into the reaction zone, they are extracted into a molecular beam apparatus and analyzed with a time-of-flight mass spectrometer. The mass spectra show that the cluster source emits, besides small clusters, also nanosized species containing around 103 atoms. These clusters were deposited on silicon and sapphire targets at room temperature. The deposited films have been analyzed with a Raman spectrometer and with a field emission scanning electron microscope (FE-SEM). The Raman spectra reveal a broad amorphouslike band and a relatively sharp peak at 518.1 cm−1. Interpretation of the sharp Raman feature, based on the phonon confinement model, suggests the presence of silicon nanocrystallites in the deposited films with a particle size of about 3–3.6 nm in diameter. The FE-SEM micrographs show an agglomerate of spherical particles of 3–12 nm in diameter, with a pronounced maximum in the size distribution at around 3.5 nm. The various methods of characterization allow us to conclude that the size of the nanoclusters is largely preserved if they are deposited on the substrate. Therefore, the technique presented here might be an efficient means to produce silicon quantum dots of about 3 nm in diameter. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Chemical Physics Letters 214 (1993), S. 34-38 
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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