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  • 1
    Electronic Resource
    Electronic Resource
    In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3857-3859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ reflectance difference spectroscopy (RDS) has been performed during growth and nitrogen-doping of ZnTe thin films fabricated by molecular beam epitaxy. The doping level of the ZnTe samples can be determined by evaluating the RD spectra in the vicinity of the E1 and E1+Δ1 transitions. RDS features in this spectral range were used to optimize online the doping performance of the N-plasma cell. Furthermore, doping-induced surface processes have been investigated, like surface saturation with activated N species and surface Fermi level pinning occurring at ambient pressure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122916
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hot wall epitaxy of C60 thin films on mica (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 679-681 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high resolution x-ray diffraction, it is shown that hot wall epitaxy is an appropriate growth technique in order to obtain perfect monocrystalline C60 thin films with a thickness up to 150 nm. The full width at half-maximum of rocking curves of the C60 (111) reflex measured on such films is about 210 arcsec. Rocking curves of thicker films exhibit a complex shape, which is interpreted as a result of a change in the growth mode of C60 films exceeding a critical thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114097
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  • 3
    Electronic Resource
    Electronic Resource
    Lateral confinement in ZnSe/ZnCdSe quantum wells grown on patterned substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 575-577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe/Zn0.75Cd0.25Se quantum wells have been grown on GaAs submicron gratings. In these quantum structures, we observe an optical anisotropy induced by lateral confinement. Photoluminescence (PL) energy-shifts and the PL temperature dependence indicate a moderate modulation of the two-dimensional electron gas in the quantum well. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120763
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  • 4
    Electronic Resource
    Electronic Resource
    Luminescence of ZnCdSe/ZnSe ridge quantum wires (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 974-976 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Blue light-emitting quantum wire structures fabricated by molecular-beam epitaxial growth on submicrometer prepatterned GaAs substrates were investigated by spatially and time resolved luminescence experiments. The quantum wires are formed due to the different growth rates of ZnCdSe on the (111) and (100) surfaces of the grated substrate. With decreasing wire width, the exciton luminescence splits into two clearly distinguished lines. These lines can be assigned to the emission of the ridge quantum wire and the emission of ZnCdSe quantum wells at the bottom of the grooves. The two-dimensional quantum confinement in the ridge wire is confirmed by a maximum of the decay time at the energy of the ridge luminescence. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124571
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    Paper (German National Licenses)
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