Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 3041-3045
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thermal quenching of photoluminescence from InAsxP1−x/InP strained-layer quantum wells has been investigated over the temperature range of 20–295 K. Structures with compositions of x=0.67 and x=1.0 and quantum well thicknesses of 1–17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351514
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