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  • 1
    Electronic Resource
    Electronic Resource
    Evaluating the effects of optical and carrier losses in etched-post vertical cavity lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5871-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the combined effects of optical scattering loss and surface recombination (or carrier diffusion) on the performance and scalability of etched-post vertical cavity lasers (VCLs). The size dependence of optical losses and threshold gain are determined from pulsed measurements of external quantum efficiency. Deeper etch depths result in a stronger radial dependence of the threshold gain, which quickly increases the threshold current density. With optical loss accounted for, pulsed threshold current density measurements give the extra information needed for evaluating carrier loss. Surface recombination or carrier diffusion also results in threshold current density increases, but scalability is ultimately limited by the ability of the active region to provide enough gain for smaller size, higher optical loss devices. Even with these losses, three-quantum-well VCLs with shallow etches have threshold currents as low as 420 μA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360588
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  • 2
    Electronic Resource
    Electronic Resource
    Reduced lateral carrier diffusion for improved miniature semiconductor lasers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3377-3381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The desire to fabricate very small semiconductor lasers requires that we address problems associated with surface recombination. We have proposed and demonstrated a segmented quantum well active region in which lateral diffusion is intentionally reduced. Such a structure should prevent the transfer of electrons and holes from the interior of a laser device to the edges. The supply of carriers to surface-related carrier traps can thus be eliminated, and we need not concern ourselves with the electrical quality of the surfaces. In this work we present calculations which predict laser performance for various lateral diffusion conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365032
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  • 3
    Electronic Resource
    Electronic Resource
    Design parameters for lateral carrier confinement in quantum-dot lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2752-2754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum-dot (QD) lasers have fallen short of their promise of ultralow threshold and high characteristic temperature. Here, we report that QDs show great promise for controlling lateral carrier leakage. While oxide apertures continue to enable improved performance in vertical cavity surface emitting lasers (VCSELs) by reducing optical losses and current spreading, lateral carrier losses remain uncontrolled. We investigate QD active material in which lateral diffusion is intentionally reduced. Cathodoluminescence results demonstrate reduced lateral diffusion in the material with which we expect 〉50% reduction in the threshold current for 1-μm-wide edge emitters or 5-μm-diam VCSELs. However, initial edge-emitter results demonstrated 10% reduction due to unintended current spreading and lasing from higher states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124003
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  • 4
    Electronic Resource
    Electronic Resource
    Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1966-1968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the use of low damage dry etching and in situ molecular beam epitaxial (MBE) regrowth in creating high-quality regrown interfaces. By fabricating buried, etched ridge InGaAs/GaAs lasers, we are able to measure the interface recombination portion of the threshold current and extract the interface recombination velocity. We find that a two-part etching process composed of ion beam assisted etching and chlorine gas etching, followed by in situ MBE regrowth, results in a very low interface recombination velocity of 3×103 cm/s. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113292
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  • 5
    Electronic Resource
    Electronic Resource
    ZnSe-ZnSSe electro-optic waveguide modulators (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3228-3229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rib waveguides have been fabricated in the ZnSe-ZnSSe material system, grown by molecular beam epitaxy on GaAs substrates. Using Schottky barrier contacts, rib-waveguide optical phase modulators have been demonstrated and the strength of the linear electro-optic (Pockels) effect has been measured. A change in the index of refraction of Δn/ΔF=±1.7×10−9 cm/V has been attained for 633 nm light. This translates to a maximum Δn of 0.0008. Rib waveguides with losses as low as 0.66 cm−1 have been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105740
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  • 6
    Electronic Resource
    Electronic Resource
    The Immune Response to Pneumococcal Polysaccharide Vaccine in Zinc-Depleted Mice (2003)
    Oxford, UK : Blackwell Science Ltd
    Scandinavian journal of immunology 58 (2003), S. 0 
    Details
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Zinc depletion affects several facets of the immune system and the resistance to infections. We assessed the effect of zinc deprivation on the immune response to the pneumococcal polysaccharide antigens in the commercially available Pneumovax® pneumococcal vaccine. Young female BALB/c mice were fed diets with 2.7, 5.8 or 25 µg of elemental zinc per mg diet. After six weeks of pair feeding, there were significant differences in the mean body weights between the feeding groups and we demonstrated a dose response of the zinc level in the diet on growth. The induced zinc deficiency had no discernible effect on the antipneumococcal polysaccharide immunoglobulin M (IgM) response following immunization with the pneumococcal vaccine. Although zinc depletion has a detrimental effect on the immune system, the murine T-cell-independent response to antigens such as those in the pneumococcal polysaccharide capsule does not seem to be affected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3083.2003.01283.x
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