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  • 1
    Digitale Medien
    Digitale Medien
    Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1368-1372 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaSb/In0.19Ga0.81Sb single quantum well structures have been grown successfully by metalorganic chemical vapor deposition. The conduction band to mj=±3/2 heavy hole (1C-1HH) transition peak was observed in GaSb/In0.19Ga0.81Sb single quantum well (SQW) with the well width of 100–270 A(ring). From the excitation power dependence of the photoluminescence spectra, the 1C-1HH transition peak was still observed at low excitation power, 0.31 W/cm2, indicating that the carrier confinement in the well is good. From the temperature dependence of emission intensity of the 1C-1HH transition, the nonradiative recombination centers were few and less than that of the D°-A (donor-acceptor) transition arising from the GaSb barrier layers at temperatures below 30 K. This indicates the good quality of our SQW structure. The dependence of the 1C-HH transition energy was compared with the theoretical results using a strained model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351255
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  • 2
    Digitale Medien
    Digitale Medien
    High luminous efficiency thin-film electroluminescent devices with low resistivity insulating materials (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1509-1512 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In order to fabricate high brightness and high efficiency thin-film electroluminescent (EL) devices, the emission characteristics of devices employing low resistivity and high dielectric constant materials, such as radio-frequency-sputtered HfO2 films, have been studied. It was found that the EL device with a glass/indium tin oxide/BaTiO3/ZnS:TbF3/HfO2/Ta2O5/HfO2/Al structure exhibited higher brightness and higher efficiency than the other devices. The highest luminous efficiency (η) and brightness of 0.9 lm/W and 1000 cd/m2, respectively, were obtained at 1-kHz sinusoidal wave voltage excitation. This was mainly due to the insulating layers adjacent to the active layer, which have low resistivity and high dielectric constant. So, it has higher density of interface states and deeper interface states at HfO2–ZnS and BaTiO3–ZnS interfaces.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351219
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  • 3
    Digitale Medien
    Digitale Medien
    Fabrication of InP-based NnpnN heterojunction bipolar transistor (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 826-829 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: InGaAs(P)/InP double heterojunction bipolar transistors have been successfully fabricated by inserting an n-type InGaAsP (Eg=0.95 eV) quaternary (0.1 μm, undoped) layer on either side of the base by liquid-phase epitaxy (LPE). As we know, it is the first time to grow this structure by LPE. These devices have been fabricated using a non-self-aligned technology. In this case it can improve the common-emitter current/voltage (IC /VCE) characteristics. Small signal current gain hfe about 100 and dc current gain hFE about 80 at IC=38 mA can be obtained. The ideality factor of emitter-base junction is 1.43.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346763
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  • 4
    Digitale Medien
    Digitale Medien
    Zinc doping in gallium antimonide grown by low-pressure metal-organic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 56-59 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Zn-doped GaSb epilayers grown on GaAs and GaSb substrates by low-pressure metal-organic chemical vapor deposition were studied. Triethylgallium and trimethylantimony were used as Ga and Sb sources, respectively. The carrier concentrations of p-type GaSb epilayers were affected by V/III ratio and growth temperature. Diethylzinc(DEZn) was used as the p-type dopant. The relationship between carrier concentration P and mole fraction [DEZn] is P=K[DEZn]2.3. Photoluminescence for different carrier concentration was compared. There exist two different regions for the carrier concentration versus growth temperature.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353829
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  • 5
    Digitale Medien
    Digitale Medien
    Studies of InSb metal-oxide-semiconductor structure fabricated by photochemical vapor deposition using Si2H6 and N2O (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2335-2338 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Silicon oxide films (SiOx,0〈x〈2) have been prepared by photolysis of disilane (Si2H6) with nitrous oxide (N2O) at temperature below 200 °C using 2537-A ultraviolet light. Ellipsometric studies prove that the refractive index and etching rate of the photo-oxide films depend on the substrate temperatures and gas ratio. Composition and electrical properties of the interface (SiOx/InSb) are discussed by using Auger electron spectroscopy and metal-oxide-semiconductor capacitors. Hysteresis-free capacitance-voltage characteristics measured at 77 K are attained and the minimum interface state density is only 1.5×1011 cm−2 eV−1.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348967
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  • 6
    Digitale Medien
    Digitale Medien
    The effect of annealing temperature on electrical properties of Pd/n-GaSb Schottky contacts (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 646-648 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thermal stability for Pd/n-GaSb Schottky contacts is analyzed and studied. At room temperature, Pd/n-GaSb Schottky diodes have better performance, but when the annealing temperature is increased to 300 and 450 °C for 30 min, Schottky contacts gradually become ohmic contacts. From the measurement of Rutherford backscattering spectroscopy and x-ray diffraction analysis, the result indicates that the interdiffusion between palladium and gallium forming Ga5Pd is the dominant factor for degrading properties of Schottky diodes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346793
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  • 7
    Digitale Medien
    Digitale Medien
    Effects of trimethylantimonide/triethylgallium ratios on epilayer properties of gallium antimonide grown by low-pressure metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6383-6387 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Undoped GaSb epitaxial layers were grown on (100) GaSb substrates by low-pressure metalorganic chemical vapor deposition. The trimethylantimonide/triethylgallium mole fraction (V/III) ratios were varied at a growth temperature of 600 °C and growth pressure of 100 Torr. It was found that the layer morphologies were strongly dependent on V/III ratios. The mirrorlike surface can be easily obtained under the V/III ratio in the range of 6–8. The growth rate was about 1.75 μm/h. The epitaxial layers were characterized by photoluminescence(PL) measurements and electron diffraction patterns. The bound-exciton peaks and strong acceptor band peak in the PL spectra were observed from the sample grown under a V/III ratio of 6.84. PL peak intensity was found to be a function of the V/III ratios. I-V characteristics of the p-n diodes fabricated on the sample of undoped GaSb/GaSb:Te was measured. The undoped acceptor carrier concentration and mobility were 9.47×1016 cm−3 (300 K), 1.60×1016 cm−3 (77 K), 275.3 cm2 /V s (300 K), and 491.6 cm2/V s (77 K), respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346886
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  • 8
    Digitale Medien
    Digitale Medien
    Effects of elastic strain on the band offset and effective mass of strained InGaSb epilayers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7288-7293 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of elastic strain induced by lattice mismatch on the effective mass and band offset at Γ point are studied in this article. We found that the effective masses (electron, light- and heavy-hole) become anisotropic in a strained layer. The theoretical calculations were made using a method of linear combination of atomic orbitals, and the overlapping integrals are adjusted in accordance with the change of atomic distance. In the kz direction, the effective mass ratios (strain: unstrain) of the electron of InxGa1−xSb/GaSb structure were found to vary from 1 to 3.38 for 0≤x≤1, the corresponding ratios of the light- and heavy-hole are 1 to 3.38 and 1 to 0.99, respectively. In the kx and ky direction, the ratios of the light- and heavy-hole are 1 to 1.02 and 1 to 1.13, respectively. For unstrained and strained interfaces, the band offset ratios of 90:10 and 57:43 (conduction band: valence band) are obtained, respectively. Experimental studies were also performed on the InxGa1−xSb/GaSb strained-layer superlattice sample. It was found that the theoretical calculations agree well with experimental results in this study.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354994
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  • 9
    Digitale Medien
    Digitale Medien
    High quality undoped n-type GaSb epilayers by low-temperature metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2892-2895 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We obtain undoped n-type GaSb epilayers by low-temperature metalorganic chemical vapor deposition at a low growth temperature of 450 °C reproducibly. Different conduction types of GaSb and different energy levels are compared by photoluminescence spectra. For n-type undoped GaSb, the FWHM of dominant peak and bound exciton are 11 and 1.3 meV, respectively. Because semi-insulating GaSb substrates cannot be obtained, we cannot use the Hall effect to determine the carrier concentration and mobility of the homoepilayer. In order to identify the conduction types of GaSb, ohmic contact and Schottky barrier are made by Au/Ge/Ni and Au, respectively. The concentrations of undoped n-type GaSb homoepilayers obtained from I-V and C-V measurements are 1.44×1017–3.0×1017 cm−3, respectively. The mobility and concentration of undoped p-type GaSb heteroepilayers are 758 cm2/V s and 9.0×1015 cm−3 at 300 K, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354643
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  • 10
    Digitale Medien
    Digitale Medien
    Energy levels of GaSb grown by metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8349-8352 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Undoped GaSb epilayers were grown on GaSb and GaAs substrates using the metalorganic chemical vapor deposition (MOCVD) technique, and photoluminescence (PL). Hall effect measurements were used to characterize the undoped epilayers. For undoped GaSb epilayers, four energy levels revealed by PL spectra are shown to be due to acceptors, using KTdp/dEf va Ef-Ev data obtained from Hall effect results, where p is the hole concentration, Ef and Ev are the Fermi level and the top of valence band, respectively. The acceptor levels lie at 3, 58, 80, and 130 meV above the top of valence band, respectively. The donor level is 15 meV below the bottom of the conduction band. These acceptor levels exist in almost all of the undoped p-type GaSb epilayers grown at high temperature, while the donor level exists only in the undoped n-type GaSb epilayers grown by low-temperature MOCVD. It is found that these levels may be changed using the different growth temperatures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353427
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