Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 5120-5125
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Erbium doped Al2O3 films with concentrations up to 6×1020 Er cm−3 have been prepared in a single step process by pulsed-laser deposition. Alternate ablation of Al2O3 and Er targets has been used to control the in-depth distribution and in-plane concentration of Er3+ ions independently. The characteristic Er3+ photoluminescence response at 1.53 μm has been studied as a function of the Er3+ distribution. It is found that lifetime values can be greatly increased by increasing the Er3+–Er3+ in-depth separation above 3 nm. This result can be related to a reduced Er3+–Er3+ energy migration process. The in-plane Er3+ concentration was increased by either increasing the number of pulses on the Er target or the laser energy density for ablation. By the latter method in-plane concentrations as high as 1.1×1014 Er cm−2 per layer (corresponding to 2×1020 Er cm−3) were achieved, while keeping lifetime values as high as 6 ms. This result is explained in terms of shallow Er3+ implantation during deposition. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1409575
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