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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4900-4905 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An application of the continuous wave four-wave mixing technique for studying the nature of metastable centers in semiconductors is presented. The results of measurements of the four-wave mixing scattering efficiency dependence on the intensity of the write beams for CdF2 crystals doped with In or Ga are presented and theoretically explained. It is also shown that the obtained results can be used for identification of the sign of the Hubbard correlation energy of metastable centers in semiconductors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 195-197 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present the theoretical estimation of the 3+(large-closed-square)2+ ionization energies of rare earth (RE) ions in sulfides. It is shown that for Yb, Eu, Sm, Tm, and Pr the RE2+ energy level is located in the forbidden gap of wide-gap sulfides [ZnS (except Pr), CaS, SrS, BaS, MgS]. For these RE ions the possibility of a new efficient excitation mechanism (impact ionization) of electroluminescence is indicated. Highly efficient electroluminescence can be obtained if the ionized RE center rapidly recaptures a free carrier either directly or indirectly via the RE3+ excited state. This prediction is confirmed by the recent experimental results for Pr-doped SrS. Further experimental results supporting the presented calculations are discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 40-42 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new, very efficient excitation mechanism of Yb intrashell 4f-4f emission in ZnS is reported. We show that the energy transfer from donor-acceptor pairs to Yb sites leads to Yb ionization (Yb3+⇒Yb2+), followed by capture of ionized carriers via the Yb3+ external excited state (bound exciton state), an energy transfer to the Yb3+ 4f shell, and Yb3+ 4f-4f radiative recombination. Since three centers (donor, acceptor, and Yb) participate in the energy transfer process in which Yb is first ionized, the above excitation mechanism is of three-center Auger transition nature. A similar excitation mechanism is expected for Eu, Sm, and Tm in ZnS, i.e., for these rare earth (RE) ions which can change their charge state from 3+ to 2+ in this lattice. For wider band-gap sulfides, such as CaS or SrS, this mechanism can be of importance also for other REs, such as, for example, Pr, Dy, and Er.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6753-6757 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the Auger effect on shallow donors in the luminescence of manganese ions in semiconducting CdF2:Mn, Y crystals is suppressed by a magnetic field. The Auger effect, which is a spin-dependent energy transfer from the manganese ions to the electrons occupying shallow donors, is sensitive to the orientation of the magnetic moments of the manganese ions and electrons occupying shallow donors. An increase of the magnetic field results in the increase of the luminescence decay times of the Mn2+ ions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 31-33 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that semiconducting CdF2 crystals doped with indium is an efficient medium for optical storage of information in static and dynamic regimes. A metastable phototransformation of 1018 cm−3 In centers from a localized deep state to a hydrogenlike shallow state leads to a change of the refractive index Δn of about 10−4 for the probe beam at the wavelength of 500 nm. The diffraction efficiency is temperature dependent due to spontaneous decay of the grating caused by thermal recovery of the In impurity from the metastable hydrogenic state to the localized ground state. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1552-1554 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique for measuring differential lattice dilation by scanning tunneling microscope is proposed. The method was used to measure the metastable lattice dilation caused by a deep-shallow phototransformation of bistable In impurities in CdF2 crystals. A total linear crystal shrinkage of 1.8×10−6 results from a partial counterbalancing of the lattice contraction associated with the photoionized deep localized In state by a lattice expansion caused by weakly bound electrons at the shallower hydrogenlike state of the bistable In donors. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2934-2936 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that semiconducting CdF2 crystals doped with gallium provide an efficient medium for optical storage of information in static and dynamic regimes in a temperature range close to 300 K. Ga is a bistable center in CdF2 crystals. Illumination by visible and UV light below 500 nm causes phototransformation of these centers from a deep-localized to a shallow-hydrogenic state. They are separated by a vibronic barrier that causes metastability below 250 K. The phototransformation changes the local polarizability, and thus, the local refractive coefficient. This, in turn, allows writing a phase hologram with a diffraction efficiency and decay time being temperature dependent with the activation energy Eact=0.65±0.1 eV. A spontaneous decay of the grating is caused by a thermal recovery of the Ga impurity from the metastable hydrogenic state to the localized ground state. The writing is a local process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 442-444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model, based on the Harrison theory of bonding is developed for quantitative explanation of the nephelauxetic effect, i.e., a reduction of interelectronic crystal field Racah repulsion parameters B and C due to the covalency of bonds. The results are used for a description of the effect in chromium-doped lithium niobate crystals. The model can be also applied to other systems. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 101 (1990), S. 435-438 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Luminescence 38 (1987), S. 250-251 
    ISSN: 0022-2313
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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