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  • 1
    Electronic Resource
    Electronic Resource
    Possible giant surface magnetostriction in amorphous Co76Cr4B20 (abstract) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5218-5218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have made preliminary measurements of magnetostriction at the surface (∼5 A(ring)) of sputter-cleaned, amorphous ribbon in uhv (3×10−10 Torr). The value obtained λsurfs(approximately-equal-to)−14.8×10−6 is nearly four times the magnitude of the bulk saturation magnetostriction λbulks=−3.8×10−6 of this material Co76Cr4B20. The measurement was based on the spin polarization of the true secondary electrons emitted normally from the surface by a grazing incidence, 2 keV primary electron beam illuminating an area of a few mm2. Most of the low energy secondary electrons are believed to come from a depth of less than 0.5 nm. The spin polarization was measured using a thin film, diffuse-spin-orbit-scattering polarimeter. High quality, reproducible polarization vs. field (P–H) loops were obtained after repeated sputter cleaning and annealing in situ. Magnetostriction is determined by λ(H)= ∫H0d(H)dH where d(H)=4π∂M/∂σ]H is the magnetostrictivity, i.e., the stress sensitivity of magnetization at constant field. The latter was measured by bending the sample in situ to achieve tensile or compressive stresses at the front surface up to 107 Pa. The present effect is in no way related to the stress induced changes in bulk magnetostriction measured by Barandiaran et al. which are three orders of magnitude smaller in Δλ/Δσ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348084
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  • 2
    Electronic Resource
    Electronic Resource
    Compensation in Ge-doped InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 606-609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic and optical properties of Ge-doped vapor epitaxial indium phosphide were studied. From Hall-effect measurements, it was determined that the Ge-doped material was heavily compensated even for highly doped material. The defects responsible for compensating the InP were investigated by low-temperature photoluminescence measurements at 10 K. Strong acceptor-related transitions at 1.379 and 1.395 eV were observed in the doped material. Deep-level emission at 1.17 eV was also observed in the heavily doped material. The relationship between these bands and compensation is discussed. The observed doping dependence of Ge in InP suggests that self-compensation by native defects may be important in determining the electronic properties of group IV doped III-V compounds in support of recent theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346786
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  • 3
    Electronic Resource
    Electronic Resource
    Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4616-4618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia were investigated by transient capacitance spectroscopy. A total of three hole traps associated with nitrogen doping was observed with activation energies of 0.21, 0.3, and 0.45 eV. The traps H(0.21) and H(0.3) are tentatively attributed to a nitrogen-impurity complex. Concentrations of deep trapping states as high as 8×1014 cm−3 were observed in the as-grown layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335369
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetization depth profiling with low-energy electron spectroscopy and MOKE (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3669-3671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-energy electron spectroscopy with (spin) polarization analysis (LEESPA) is described. The power of this new technique, especially in combination with magneto-optic Kerr effect (MOKE), for studying the important effects of surface magnetism are illustrated with the first results on low magnetostriction amorphous Co-Fe-B ribbons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340680
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  • 5
    Electronic Resource
    Electronic Resource
    Surface magnetization of Co70V10B20 and Fe77Cr6B17 amorphous alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5446-5448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization has been measured as a function of in-plane applied field and temperature by measuring the spin polarization of low-energy electrons (LEESPA) excited from the surface by an unpolarized electron beam (Ep=2 keV). These extremely surface sensitive data (probing 〈25 A(ring)), taken on surfaces characterized by Auger electron spectroscopy, are compared with results obtained by magneto-optic Kerr effect (MOKE probing 〈250 A(ring)) and bulk magnetometry. The LEESPA M-H loops show considerably lower remanence than MOKE indicating appreciable surface anisotropy. The LEESPA polarization approaches zero at approximately TC =170 °C for both the Co and Fe base alloys with less curvature than bulk magnetization does. The bulk TC's are 20 °C higher than those measured by LEESPA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342342
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetization process in devitrified glassy alloy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3563-3565 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co84Nb10B6 metallic glasses have been devitrified so as to produce a series of specimens with increasingly coarser microstructure. Samples annealed for 1 h at Ta≤700 °C remain largely glassy with a distribution of fine cobalt precipitates. Their coercivities increase with mean precipitate diameter. Samples annealed for 1 h at Ta≥700 °C are fully crystallized (fcc Co plus a Co-Nb boride). Their coercivities decrease with increasing mean grain size. An abrupt increase in coercivity occurs between Ta=650 and 700 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335007
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  • 7
    Electronic Resource
    Electronic Resource
    Strained layers and magnetoelastic coupling
    Amsterdam : Elsevier
    Journal of Magnetism and Magnetic Materials 104-107 (1992), S. 1717-1720 
    Details
    ISSN: 0304-8853
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-8853(92)91522-U
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  • 8
    Electronic Resource
    Electronic Resource
    Point mutations in the chloroplast 16s rRNA gene confer streptomycin resistance in Nicotiana plumbaginifolia (1994)
    Springer
    Current genetics 26 (1994), S. 132-135 
    Details
    ISSN: 1432-0983
    Keywords: Nicotiana plumbaginifolia ; Chloroplast 16s ribosomal RNA ; Streptomycin resistance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract In a previous paper we reported the isolation of streptomycin-resistant mutants from Nicotiana plumbaginifolia and presented evidence for chloroplast control of the resistance trait. To understand the molecular basis of the resistance in these mutants, we sequenced three regions in the chloroplast 16s rRNA gene, which correspond to the 5′ terminus, the 530 loop, and the 900 stem/loop of Escherichia coli 16s rRNA, and compared them with the sequences of the wild-type. Our results show that: (1) nine mutants have a C to T change at position 912, (2) one mutant (SR1021) has a G to A change at position 885, (3) one mutant has a C to T change at position 526, based on E. coli numbering; and (4) three mutants do not have any change in the regions analyzed. The point mutation detected in SR1021 has not been reported previously. In E. coli 16s rRNA, position 885 is protected from chemical probing by ribosomal protein S12 and is closely juxtaposed with the streptomycin-binding region (positions 912–915) in the predicted secondary structure. It is likely that the G to A transition at this position is a novel mutation for streptomycin resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00313800
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