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Electromodulation reflectance of low temperature grown GaAs (1997)

Hsu, T. M. ; Sung, J. W. ; Lee, W. C.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 82 (1997), S. 2603-2606

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have studied low temperature grown GaAs by electromodulation reflectance spectroscopy for growth temperatures between 200 and 320 °C. The reflectance spectra can be observed only when the concentration of the arsenic antisite defect is lower than 3.4×1019 cm−3. The absence of the signal for a rich defect sample is related to the short carrier lifetime and surface depletion width. The transition energies of E0 and E1 are found to increase with the decrease of the growth temperatures. The increase of the transition energies is attributed to lattice mismatch and deviation of the stoichiometry. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.366073

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