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  • 1
    Electronic Resource
    Electronic Resource
    Charge-carrier kinetics in semiconductors by microwave conductivity measurements (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1763-1775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theory and measurements of the conductivity and the (transient) photoconductivity in the microwave frequency range are presented. The theory is tested on noninvasive measurements of semiconductors with known properties, i.e., Si wafers, in a simple apparatus. Quantitative agreement between theory and experiment is found without the use of adjustable parameters. A contactless and accurate determination of the conductivity of Si wafers in a restricted conductivity range is proposed. The quantitative evaluation of photoconductivity measurements makes a detailed discussion of nonuniform photoconductivity possible. The requirements for reliable measurements of nonhomogeneous charge carrier kinetics are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360206
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Erbium luminescence in doped amorphous silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 446-447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time the observation of a sharp peak in the broad luminescence spectrum of hydrogenated amorphous silicon (a-Si:H) has been achieved, using erbium as a dopant. Thus, a method of investigating the structure of solid-state systems which previously has only been used with crystals can now be applied to a-Si:H. The idea is to measure the splitting of the luminescence of "spy'' atoms, or ions, by the crystal field of the host substance subject of investigation into which they are incorporated. Finding a suitable substance for use with a-Si:H has proven to be a difficult task, which we now have accomplished as a first step in establishing this method for the investigation of amorphous substances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102760
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    In-situ quality monitoring during the deposition of a-Si:H films
    Amsterdam : Elsevier
    Applied Surface Science 63 (1993), S. 222-226 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(93)90094-R
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of amorphous silicon films by contactless transient photoconductivity measurements (1995)
    Springer
    Applied physics 61 (1995), S. 623-629 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 73.60. Fw; 72.80.Ng
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Contactless transient photoconductivity measurements of intrinsic a-Si : H films in the microwave frequency range are presented. The measurements are evaluated quantitatively and the electron drift mobility is determined. It is shown that the influence of the surface on the observed decay behaviour can be neglected. A relation between the long time decay behaviour and the position of the Fermi level is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01542873
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of amorphous silicon films by contactless transient photoconductivity measurements (1995)
    Springer
    Applied physics 61 (1995), S. 623-629 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.Fw ; 72.80.Ng
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Contactless transient photoconductivity measurements of intrinsic a-Si: H films in the microwave frequency range are presented. The measurements are evaluated quantitatively and the electron drift mobility is determined. It is shown that the influence of the surface on the observed decay behaviour can be neglected. A relation between the long time decay behaviour and the position of the Fermi level is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01542873
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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