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  • 1
    Electronic Resource
    Electronic Resource
    Electrode separation method to the boundary condition for a-Si TFT mixed-level simulation (1998)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 11 (1998), S. 123-130 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Numerical Methods and Modeling
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents the electrode separation method for the boundary condition of a-Si TFT mixed-level simulation. The Poisson equation and the continuity equation are formulated into equivalent circuits. So, a circuit simulator can be used to handle the two-dimensional numerical simulation of a-Si TFT. The boundary condition problem between a semiconductor and an external circuit is solved by the electrode separation method. An electrode is separated into two nodes to fit Kirchhoff's current law and the semiconductor equations, respectively. A simple a-Si TFT/LCD circuit is taken as an example for the electrode separation method. For mixed-level simulation this technique is very useful. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
  • 2
    Electronic Resource
    Electronic Resource
    SIMULATION OF AMORPHOUS SILICON THIN-FILM TRANSISTOR INCLUDING ADAPTED GUMMEL METHOD (1997)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 10 (1997), S. 3-11 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Numerical Methods and Modeling
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemented into a two-dimensional device simulator for the simulation of a-Si TFTs. The simulation results show that the AGM converges well while the GM fails to converge for the simulation of a-Si TFTs. Hence, the AGM is a useful technique for the simulation and analysis of a-Si TFTs. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
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