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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 411-415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly c-axis oriented La-modified PbTiO3 (PLT) thin films were deposited on (100) oriented Pt thin film or (100) cleaved MgO single crystals by rf-magnetron sputtering. Figures of merit for infrared detector were studied on the PLT thin films. It was found that a composition Pb1−xLaxTi1−x/4O3 where x=0.10 (PL10) was the most suitable for the infrared detector. The films have the advantage of having pyroelectric effect and polarization with the same direction even without a poling treatment. The films have high figures of merit Fv(=γ/cvεr) of 0.83×10−10 (C cm/J) and Fm(=γ/cv(εr tan δ)1/2) of 1.2×10−8 (C cm/J) because of relative low-dielectric constant εr of 200 and high-pyroelectric coefficient γ of 5.3×10−8 C/cm2 K. Both the Fv and the Fm of the films are 3 times as large as those of PbTiO3 ceramics. High sensitive pyroelectric infrared sensors were fabricated by using the PL10 films. The thickness of the films is 2 μm, and the electrodes were vacuum evaporated Ni-Cr of approximate area 7×10−4 cm2. The MgO substrate under the sensing area is etched off by phosphoric acid. The sensors have a large voltage responsivity of 2400 (V/W) at 25 Hz. A high specific detectivity D*(500,25,1) of 5×108 (cm(Hz)1/2 /W) has been attained.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2914-2919 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an rf-magnetron sputtering method, highly c-axis-oriented La-modified PbTiO3 (PLT) thin films with compositions of Pb1−xLaxTi1−x/4O3, where x=0.05, 0.10, and 0.15, have been obtained on MgO single-crystal and epitaxial Pt thin-film substrates under conditions of low gas pressure and low deposition rate. The degree of c-axis orientation of the PLT films decreases, and the tetragonality of PLT becomes smaller with increasing La content. The Curie point of the films decreases at a rate of 18 °C/at. % of La with an increase of La content. D-E hysteresis loops were observed, and these became slim and symmetric with increasing La. It was found that significant pyroelectric currents are detected on all as-grown specimens even without a poling treatment, and the directions are the same in all specimens. Relative dielectric constant εr decreases, and pyroelectric coefficient γ increases with increasing degree of c-axis orientation. εr and γ became large with increase of La content in the films. Considering the figure of merit for pyroelectric infrared detection and the temperature coefficient of γ, it was concluded that PLT films with x=0.10 were good material for pyroelectric infrared detectors.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1666-1670 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lead zirconate-titanate (PZT) thin films with tetragonal and rhombohedral structures have been successfully grown with good epitaxy on MgO single crystals and on [100]-oriented platinum thin films by rf-magnetron sputtering. The PZT films were obtained by using sputtering targets with compositions of Pb(ZrxTi1−x)O3, where x=0.2–0.8. The tetragonal PZT thin films have a strong [001] orientation, and the rhombohedral ones are (100) oriented. Asymmetric D-E hysteresis loops were observed on the tetragonal films. Nearly symmetric loops were observed on the rhombohedral films and the rhombohedral loops around the morphotropic phase boundary had slim loops. The tetragonal thin films of x=0.45 have a spontaneous polarization of 45 μC/cm2, a remanent polarization of 40 μC/cm2, and a coercive field of 150 kV/cm. It was found that significant pyroelectric currents are detected on both [001]-oriented tetragonal and (100)-oriented rhombohedral PZT films even without a poling treatment, and the direction is the same in all specimens. The relative dielectric constant εr achieves a maximum at the morphotropic phase boundary, as occurs for PZT ceramics. The pyroelectric coefficient γ increases with increase of Zr content and reaches a peak near the phase boundary in the tetragonal thin films. On the other hand, for the rhombohedral films, γ drops around the phase boundary and increases upon increasing Zr content. Thin films of x=0.45 have εr of 400 and γ of 4.2×10−8 (C/cm2 K). These films will be suitable for use in piezoelectric transducers and pyroelectric infrared detectors.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5868-5872 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High sensitive pyroelectric linear array infrared sensors have been fabricated by using highly c-axis-oriented and spontaneous polarized La-modified PbTiO3 (PLT) thin films. The PLT thin films were deposited on (100)-oriented Pt thin film on (100)-cleaved MgO single crystals by rf magnetron sputtering. The PLT thin films have high figures of merit for voltage responsivity (Rv) and specific detectivity (D*) without a poling treatment. Two types of linear array sensors, reticulated and nonreticulated ones, were fabricated. The reticulated and nonreticulated sensors have 64 elements with 200-μm pitch and 128 elements with 100-μm pitch, respectively. Ni-Cr electrodes of approximate area 1.9×10−4 or 3.0×10−4 cm2 were deposited by vacuum evaporation on the PLT thin films with a thickness of 3–4 μm. Pyroelectric coefficients and their uniformity increased upon decreasing the deposition area of an element. Therefore, the elements of reticulated sensors have considerably larger Rv and D* compared with the nonreticulated ones. The nonreticulated sensors have a very high resolution of 10 elements/mm, a large Rv of 900 V/W at 100 Hz, and a high D* (500 K, 100, 1) of 1.5×108 cm Hz1/2/W. Furthermore, the reticulated ones have a very large Rv of 2200 V/W, a remarkably high D* of 6×108 cm Hz1/2/W, and a very low thermal cross talk of 〈3% at 100 Hz.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 361-367 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly c-axis oriented and epitaxial PbTiO3 thin films were grown on MgO single crystals and epitaxial Pt film substrates by the rf-magnetron sputtering method. The films with a 98% c-axis orientation rate were obtained under low deposition rate (〈20 A(ring)/min) and low gas pressure (∼1 Pa) using a PbO-rich target. Phase transition of the PbTiO3 thin film was studied by high-temperature x-ray diffraction. It was found that the c-axis of the tetragonal phase was parallel to the substrate just below Tc and the c-axis becomes perpendicular to the substrate with lowering of temperature. These films show high resistivity (∼1010/Ω cm). It was found that significant pyroelectric currents are detected on all specimens without poling treatment. The polarization directions of the films are the same in all specimens. One of these films had a low relative dielectric constant of 97 and a high pyroelectric coefficient of 2.5×10−8 C/cm2 K without poling treatment. These films will be suitable for applications such as pyroelectric infrared detector and piezoelectric transducer.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1463-1465 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La-modified PbTiO3(PLT: Pb0.9La0.1Ti0.975O3) thin films by rf magnetron sputtering were prepared on the preferred (100)-oriented oxide buffer layers with NaCl-type structure, which were prepared by plasma-enhanced metalorganic chemical vapor deposition. Fused silica, (111)Si, soda-lime glass, and stainless steel were used as the substrates to prepare the oxide buffer layers. The c-axis and a-axis preferred oriented PLT thin films were obtained on the buffer layer, independent of the kind of substrate. Further, highly c-axis oriented PLT thin films were obtained when the substrate had a large thermal expansion coefficient. Significant pyroelectric currents were detected without a poling treatment. The NiCr/PLT/(100)Pt/(100)MgO/stainless steel structure had a dielectric constant of 250, a dielectric loss factor tan δ of 0.8%, and a pyroelectric coefficient of 3.8×10−4 C/m2 K.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 365-367 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of PbTiO3 have been prepared on glass substrate by plasma-enhanced metalorganic chemical vapor deposition. Lead dipivaloylmethane, and titanium tetraisopropoxide were used as the source materials. High crystalline and tetragonal a-axis oriented PbTiO3 film was obtained at rf power of 200 W and substrate temperature of 570 °C. The deposition rate of the film was as high as 0.18 μm/min. The film had a smooth surface and a columnar structure. The average columnar diameter was about 80 nm. Dielectric constant and tan δ of the deposited film was 250 and 0.04, respectively. The influence of deposition conditions on deposition rate and film properties has been investigated.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Co oxide films were prepared on glass substrates at 150–400°C by plasma-enhanced metalorganic chemical vapour deposition using cobalt (II) acetylacetonate as a source material. NaCl-type CoO films were formed at low O2 flow rate of 7cm3 min−1 and at a substrate temperature of 150–400°C. The CoO films possessed (100) orientation, independent of substrate temperature. Deposition rates of the CoO films were 40–47 nm min−1. The CoO film deposited at 400 °C was composed of closely packed columnar grains and average diameter size at film surface was 60 nm. At high O2 flow rate of 20–50 cm3 min−1, high crystalline spinel-type Co3O4 films were formed at a substrate temperature of 150–400°C. The Co3O4 film deposited at 400°C possessed (100) preferred orientation and the film deposited at 150°C possessed (111) preferred orientation. Deposition rates of the Co3O4 films were 20–41 nm min−1. Both Co3O4 films with (100) and (111) orientation had columnar structure. The shape and average size of the columnar grains at the film surface were different; a square shape and 35 nm for (100)-oriented Co3O4 film and a hexagonal shape and 60 nm for (111)-oriented film, respectively.
    Type of Medium: Electronic Resource
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