Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2277-2279
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Heating of nonequilibrium carriers under intense off-resonant photogeneration was investigated in GaN epilayers at T=80 K. We determined that under these extreme conditions hot electrons and hot holes exhibit different patterns of energy dissipation. A good agreement between the experimental data and modeling results was achieved by assuming negligible efficiency of optical-phonon emission by holes. This implies that hot holes, contrary to hot electrons, are unable to establish a smooth distribution function above the threshold of optical phonon emission. We attribute this effect to a large hole mass, strong carrier–phonon coupling, and large optical-phonon energies in GaN. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124989
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