Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 889-891
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report InGaAsP/InP vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength near 1.3 μm grown by metalorganic vapor phase epitaxy. The VCSEL structure contains a double-heterostructure cavity, a metal mirror, and a SiO2/Si dielectric stack (three pairs) mirror with a measured reflectivity of 98%. A threshold current as low as 5 mA for 15-μm-diam devices with a 1-μm-thick active layer at 77 K was achieved, which is close to the best reported value (6 mA) within the accuracy of the pulse measurement. The highest operating temperature was 220 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102619
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |