Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 6196-6198
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The photoreflectance (PR) spectra of epitaxial GaAs layers were studied, with emphasis on the sharp "spike'' that has been previously observed in the PR spectra of some GaAs samples. By chemically etching the surface of our samples, we were able to separate the "spike'' from the rest of the line shape. We conclude that this "spike'' is associated with doping inhomogeneities in the samples.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343561
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