Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 2987-2989
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It was found that strong bonding takes place when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Bonding strength reaches the fracture strength of silicon bulk after heating above 1000 °C. Electric resistivity at the interface is less than 10−6 Ω/cm2. Bonding p-type silicon to n-type silicon forms a diode. The reaction between silanol groups formed on the surface may cause the bonding force. Heating above 1000 °C was thought to diffuse oxygen to inside the silicon bulk, forming an epitaxial-like lattice continuity at the interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337750
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