ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the use of electron-beam-induced current imaging and transmission electron microscopy techniques to examine defects in heteroepitaxial films of GaAs on Si. The electron-beam-induced current method has been successfully applied to obtain dark spot micrographs revealing the distribution of electrically active defects in the GaAs epilayer. Relatively large areas of dark contrast corresponding to regions of high defect density (enhanced recombination) have been identified. In contrast, within the intervening regions between these electrically active centers, areas associated with uniform electrical quality have been observed. Furthermore, in a comparative study of the microstructural character of defects using transmission electron microscopy, we have also identified corresponding regions of high and low defect density. The role of electrically active defects in determining the minority carrier lifetimes and diffusion lengths in the GaAs epilayer is also discussed. Moreover, it has been demonstrated that an electron-beam-induced current technique is an appropriate alternative to transmission electron microscopy in delineating the contribution and distribution of electrically active of defects in large-area heteroepitaxial GaAs on silicon samples.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341382
Permalink