Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2663-2665
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have observed a bistability of low-temperature photoluminescence in a n-i-n type II GaAs/AlGaAs/AlAs quantum heterostructure. The integrated luminescence intensity ratio between the two states may reach 50. In as-grown samples, the bistability range lies between 40 and 250 W/cm2. These threshold values may be reduced on mesa-type samples, using an external load resistor. Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers of the structure. The transition occurs with the alignment of electronic Γ and X states due to optical pumping.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106888
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