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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2400-2405 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chlorine reactive ion etching of silicon requires the initial removal of the native oxide prior to rapid etching of silicon. The threshold energy for sputter removal of the native oxide on silicon was measured from the apparent oxide thickness on the silicon surface as determined by x-ray photoemission spectroscopy of the Si 2p core level. Using model computations, the threshold energy to sputter the modified native oxide was determined to be 72±5 eV. The surface film chemistry during etching is different above and below the sputter threshold energy. Above the threshold, the silicon surface is contaminated with 1–2 monolayers of SiClx (x=1,2,3) and residual SiClOy. Below the threshold, the oxide is not etched and SiClOy forms on the native oxide surface. The film thickness is observed to increase with ion energy to the threshold energy indicating that ion induced chemisorption phenomena control the film thickness.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2335-2337 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of a simple inexpensive magnetic multipole to a parallel plate triode results in a magnetic enhanced etch reactor configuration that has impressive low pressure characteristics. The multipole electrode which is in the form of a cylindrical multipolar bucket, open at both ends, is added to the powered electrode of the triode being employed as a plasma etching system. The multipole becomes, in effect, an extension of the ground shield, surrounding either electrode. The resulting electrode configuration produces an extremely uniform, dense plasma at pressures as low as 2–3×10−4 Torr. The effect of the magnetic enhancement (electron containment, uniformity profile modification, and low substrate bias) is particularly pronounced at lower pressures. Significant improvement over existing triode schemes is obtained using the grounded cylindrical multipolar bucket as an extension of the ground shield of the driven electrode (not the substrate electrode). This system is considerably simpler than dual frequency driven trielectrode systems since it uses 13.56 MHz excitation of both electrodes.
    Type of Medium: Electronic Resource
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