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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of extended solubility CdxPb1−xTe alloys on BaF2 by rf magnetron sputtering (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2430-2432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial (111)CdxPb1−xTe//(111)BaF2 films in the rocksalt structure have been made by codeposition from CdTe and PbTe magnetron targets in an rf discharge onto chemipolished substrates at 320 °C. Films were prepared with x values from 0 to 0.47, well past the range of bulk thermodynamic solubility. Raman spectroscopy, Auger spectroscopy, and transmission electron microscopy showed phase segregation had not occurred. The lattice spacing in the growth direction was observed to be insensitive to x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102900
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    An annealing study of relaxation and interface quality in Si-Si1−xGex strained-layer superlattices (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3049-3055 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation and interface quality of two representative molecular-beam-epitaxy-grown Si-Si1−xGex strained-layer superlattices have been investigated by Raman scattering spectroscopy, double-crystal x-ray diffraction, transmission electron microscopy, and charge collection microscopy in a scanning electron microscope. One of the superlattices appeared stable, and the other metastable, under thermal annealing at temperatures between 600 and 900 °C. The strain values perpendicular to the growth direction as a function of annealing temperature are obtained from a kinematical simulation of x-ray rocking curves. These results are compared with the frequency shifts of the longitudinal optical phonons in the Raman spectra. Deterioration of the crystal quality and progressive relaxation was observed in the metastable superlattice. The thermally induced relaxation occurred through formation of misfit dislocations at the first Si-Si1−xGex interface and these caused threading dislocations to form within the epilayer. The degradation of the interfaces for both superlattices on annealing is correlated with a sharp decrease in the acoustic mode Raman intensities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342697
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  • 3
    Electronic Resource
    Electronic Resource
    Factors influencing the chemical vapor deposition of oriented ZnO films using zinc acetate (1995)
    s.l. : American Chemical Society
    Chemistry of materials 7 (1995), S. 1890-1896 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00058a020
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  • 4
    Electronic Resource
    Electronic Resource
    An annealing study of strain relaxation and dislocation generation in Si1−xGex/Si heteroepitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6292-6300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of interface misfit dislocations, and the accompanying strain relaxation, in a molecular-beam epitaxy grown 0.17 μm thick metastable Si0.82Ge0.18/Si(100) strained epilayer have been studied in detail as a function of rapid thermal annealing treatments over the 500–850 °C temperature range. Charge collection and transmission electron microscopy were used to determine the onset of relaxation by directly imaging misfit dislocations and to investigate the variation in dislocation density with increasing anneal temperature. The strain variation in the epilayer was carefully monitored using double-crystal x-ray diffraction and Raman spectroscopy, and the annealing induced changes in strain related to the electron microscopy observed density of interface misfit dislocations. The relative merit of each experimental technique is discussed in the light of these results. The generation of strain relieving dislocations was found to be an activated process, with an activation energy on the order of 1.5 eV for the Si0.82Ge0.18 epilayer. Preferential surface streaking, along one of 〈110〉 directions, was observed in the relaxed samples despite a nondirectional uniform network of interface misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345146
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoelectron imaging of germanosilicate optical fibre preforms (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 731-736 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The germanosilicate glass core (GeO2-SiO2) of an optical fibre preform has been analysed and imaged using small-spot (∼450 μm) x-ray photoelectron spectroscopy (XPS). The germanium oxide was most readily detected in the glass preform sample using the Al Kα x-ray-induced Ge L3MM Auger feature. The observed Ge L3MM lineshape and estimated oxidation state shift of 8.8 eV with respect to pure germanium indicate that the germanium is predominantly in the form of GeO2 (+4 oxidation state) within the germanosilicate core. Argon ion etching was found to sputter preferentially the oxygen from the glass, and the observed changes in Ge L3MM Auger lineshapes suggest that suboxide defects (GeO) are produced. Quantitative XPS images and linescans were used to map the spatial distribution of germanium within the preform and were in good agreement with measured refractive index profiles.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740211009
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    Paper (German National Licenses)
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