Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Negative differential resistance due to resonant interband tunneling of holes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3744-3746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage (I-V) behavior of a GaSb(p)/AlSb/InAs/AlSb/GaSb(p) resonant interband tunneling (RIT) heterostructure is analyzed experimentally and theoretically. The structure has been successfully grown on a (100)-oriented GaAs substrate by molecular-beam epitaxy, demonstrating that more exotic lattice-matched substrates (such as InAs or GaSb) are not required for RIT devices. Theoretical simulations of I-V behavior are developed, employing a two-band tight-binding model. Experimental I-V curves show pronounced negative differential resistance, with a peak-to-valley current ratio of 8.3 at 300 K. Good agreement is observed between measured and calculated peak current densities, consistent with light-hole tunneling through the confined InAs conduction-band state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346290
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Role of heavy-hole states in interband tunnel structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 292-294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first calculation of transport in InAs/GaSb/AlSb-based interband tunnel structures which uses a realistic band structure model. The results are compared with calculations using a two-band model which includes only the lowest conduction band and the light-hole band. It is found that heavy-hole states can introduce substantial hole-mixing effects in device structures containing GaSb quantum wells, and should have a significant influence on current-voltage characteristics interband devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104665
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Experimental observation of negative differential resistance from an InAs/GaSb interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 683-685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed negative differential resistance at room temperature from devices consisting of a single interface between n-type InAs and p-type GaSb. InAs and GaSb have a type II staggered band alignment; hence, the negative differential resistance arises from the same mechanism as in a p+-n+ tunnel diode. Room-temperature peak current densities of 8.2×104 A/cm2 and 4.2×104 A/cm2 were measured for structures with and without undoped spacer layers at the heterointerface, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103591
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2675-2677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a theoretical and experimental analysis of current transport in InAs/GaSb/InAs interband tunneling devices as a function of GaSb layer width. Our results demonstrate that current transport in these devices occurs not through simple ohmic conduction, as had been previously proposed, but via light-hole-like resonances in the GaSb valence band formed due to the imperfect matching of InAs conduction-band and GaSb valence-band wave functions at the InAs/GaSb interfaces. These resonances produce a strong dependence of the current-voltage characteristics on GaSb layer width that is both predicted theoretically and observed experimentally. Our results also suggest that coupling between InAs conduction-band and GaSb heavy-hole valence-band states is relatively unimportant in these devices. In addition, we have been able to obtain peak current densities of ∼9×104 A/cm2, significantly higher than any previously reported current densities for this structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104109
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Large peak current densities in novel resonant interband tunneling heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1257-1259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed negative differential resistance (NDR) and large peak current densities in a novel resonant interband tunneling structure grown by molecular beam epitaxy in the InAs/GaSb/AlSb material system. The structure consists of a thin AlSb barrier layer displaced from an InAs(n)/GaSp(p) interface. NDR is readily observable at room temperature with peak current densities greater than 105 A/cm2. The enhancement in peak current density relative to a structure with no AlSb barrier is consistent with the existence of a quasi-bound state in the region between the barrier and the InAs/GaAs interface. Furthermore, we demonstrate that by growing the AlSb layer on either the InAs or GaSb side of the interface, the quasi-bound state can be localized in either material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103502
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Interface roughness effects in resonant tunneling structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2004-2006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine the effect of interface roughness on resonant tunneling in double barrier structures using an exactly solvable real-space three-dimensional supercell model. We find that scattering of off-resonance states into on-resonance states provides the dominant contribution to interface roughness assisted tunneling. Our analysis of the sensitivity of scattering strength to interface layer configurations reveals preferential scattering into k(parallel)≈2π/λ states, where λ is the island size. We attribute the broadening and shifting of transmission resonances to lateral localization of wave functions, which we demonstrate directly. We also show that the degree of localization increases with island size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111720
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Tunneling characteristics of nonuniform ultrathin oxides (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2769-2771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse-bias current–voltage characteristics of metal–oxide–silicon tunnel structures containing nonuniform ultrathin oxide layers are analyzed using a numerical three-dimensional quantum mechanical scattering calculation. We find that, in general, roughness at the Si/SiO2 interface renders the oxide layer more permeable, but does not qualitatively alter I–V characteristics. In the direct tunneling regime interface roughness induces lateral localization of wave functions which leads to preferential current paths, and is characterized by current densities which increase with island size. In the Fowler–Nordheim tunneling regime, however, interface roughness affects transport primarily through scattering, which increases with island size, and results in current densities which decrease with island size. We have also shown that appropriate one-dimensional models may be used to estimate the effect of interface roughness in limiting cases. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122585
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    An embedded quantum wire model of dielectric breakdown (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 585-587 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse gate bias current–voltage characteristics of n+ polycrystalline-Si/SiO2/p-Si tunnel structures containing nanoscale quantum wires embedded in ultrathin oxide layers are analyzed using a three-dimensional quantum mechanical scattering calculation. By varying wire geometry, our model can qualitatively reproduce experimental current–voltage characteristics for ultrathin oxides having undergone soft breakdown or breakdown. We find that low-bias current densities can be greatly enhanced by resonant tunneling, and that this mechanism is highly temperature dependent. We demonstrate that funneling of wave functions into quantum wires results in highly efficient localized conduction paths which contributes to dramatic current increases in the direct tunneling regime. We also explain how quantum wires which extend partially into the oxide layer from the SiO2/p-Si interface can be used to model soft breakdown current–voltage characteristics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123153
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...