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Photoluminescence properties of Zn-doped heterostructures having native-oxide layers (2000)

Tinkham, B. P. ; Dupuis, R. D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 203-206

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The compound semiconductor industry has recently developed "native oxides" comparable to that of SiO2. Most research on these new oxides has been done with AlGaAs compounds. In this work we compare oxides generated from AlGaAs to those generated from InAlP in terms of their effects on the optical properties of GaAs (p type) active regions. Photoluminescence measurements were taken on both types of samples and comparisons were made before and after oxidation. Secondary ion mass spectroscopy was used to identify the chemical changes that occurred during oxidation. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371914

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