Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
84 (1998), S. 4185-4192
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The evolution of structural defects in high-dose arsenic-implanted (peak concentration 9×1020–2.7×1021 cm−3), epitaxially grown, relaxed Si1−xGex (0.15≤x≤0.50) during rapid-thermal annealing (RTA) has been investigated as a function of composition x and RTA using transmission-electron microscopy. The formation of monoclinic GeAs precipitates is confirmed and examined at high RTA temperature. A new type of three-dimensional defect (which we call a "hair-like" defect) is found in the alloys of x=0.15–0.25. Such defects have not been observed in pure silicon and their presence in SiGe alloys is suggested to result from interactions between dislocations and GeAs precipitates. The effects of heating rate, annealing ambient, and implantation dose on both the formation of GeAs precipitates and the removal of dislocations are investigated. A possible influence of point defects on precipitate formation is discussed. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368634
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