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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 6550-6556 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The intradimer pre-paired desorption mechanism for hydrogen on Si(100)-(2×1) has been studied with density functional calculations using 1-dimer and 3-dimer cluster models of the surface. We find that adsorption/desorption occurs in a two-step process through a metastable dihydridelike intermediate. Two transition states are identified in this pathway. We confirm that the transition states are at saddle points by computing the vibrational frequencies, and that the reaction path from the monohydride to the desorbed state goes through the intermediate by performing eigenvector-following calculations from the two transition states. The effects of cluster size and basis set on the energetics are investigated. It is observed that energetics from 3-dimer cluster B3LYP6-311G** calculations are in reasonable agreement with experimental data for both the adsorption and desorption barriers. We find an adsorption barrier of 0.65 eV and a desorption barrier of 2.94 eV. We obtain a distance of approximately 3.21 Å between the silicon dimer atoms in the intermediate structure, implying a broken dimer bond, which we confirm by considering the electron density plots for the structure. Thus our results suggest that during each adsorption or desorption event the dimer bond is broken and reformed. The forces acting on the silicon dimer atoms and the hydrogen atoms along the reaction path are also investigated and these provide a picture of the coupling of the adsorption/desorption process to surface vibrations, particularly to the dimer bond breaking and reforming. This occurrence of dimer bond breaking and reforming along the reaction path suggests an explanation for the experimentally observed large surface-temperature activation of the adsorption process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4160-4167 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the relationship between the surface morphology, Si doping behavior, and arsenic incorporation kinetics for GaAs(110) thin films grown on singular substrates by molecular beam epitaxy. To obtain films with good surface morphology, homoepitaxial growth requires low substrate temperatures and high As:Ga flux ratios. Under these conditions, the Si-doped layers exhibit n-type behavior. Growth at higher temperatures and lower As:Ga flux ratios produces films with a poorer morphology, the n-type layers become increasingly compensated, and p-type layers are eventually formed. This growth-related site switching behavior and corresponding variation in surface morphology can be attributed to a low arsenic surface population, a consequence of the small and temperature-dependent arsenic incorporation coefficient for growth on GaAs(110). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 919-921 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of arsenic on a Si(001) surface is known to have a strong effect on the growth rate during epitaxial growth of silicon from hydride precursors. In this letter, the authors describe a study of this effect using the reflection high energy electron diffraction (RHEED) intensity oscillation technique. A number of surface As coverages produced by cycles of arsine adsorption at temperature below 400 °C and hydrogen desorption at 600 °C were considered. The period of the first RHEED intensity oscillation during overgrowth on a partially As-passivated Si(001) surface is found to be proportional to that during homoepitaxy. The constant of proportionality is equal to the inverse of the fraction of the clean Si surface not passivated by As. This experimental finding is explained using a model based on rate equations for surface hydrogen coverage and site exclusion by arsenic. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3406-3408 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy (STM) and x-ray photoelectron spectroscopy (XPS) were used to observe the formation of metastable (6×6)-Si nanoclusters (diameter ∼16.5±0.1 A) on 6H–SiC(0001)-(3×3) surface. STM and XPS data suggest that these clusters are derived from the ejection of the Si-tetracluster unit of the initial (3×3) reconstruction at elevated temperatures and occur in a less Si-rich environment than the initial surface. The observed surface restructuring is related to the reconfiguration of coplanar Si bonds within the (3×3) unit cell. The occurrence of these regularly sized "magic" clusters demonstrates the potential of nanostructure formation of Si on SiC. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3278-3280 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation coefficients of As2 and As4, obtained from reflection high-energy electron diffraction intensity oscillations in the As-limited growth regime, are compared for the growth of GaAs on (001), (110), and (111)A surfaces by molecular beam epitaxy. The kinetic results are remarkably similar for (110) and (111)A, but very different from those obtained on (001). The incorporation coefficients decrease with increasing temperature for all three surfaces, with the effect being much more dramatic on (110) and (111) A. The low- and temperature-dependent incorporation coefficients on (110) and (111)A explain the need for high As:Ga flux ratios and low substrate temperatures in the preparation of high-quality GaAs epitaxial layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 933-935 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodic variation in optical second-harmonic generation during homoepitaxial growth of silicon on singular Si(001) surface is reported. The period of the oscillations corresponds to bilayer growth, and the oscillations are correlated with the mechanism associated with a two-dimensional layer-by-layer growth mode. This mechanism is tentatively attributed to periodic domain coverage variations analogous to the oscillatory response in linear optical technique of reflectance anisotropy. The current experiment, however, cannot distinguish this mechanism from another based on anisotropic second-harmonic generation response with respect to steps. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 33 (1995), S. 1161-1168 
    ISSN: 0887-624X
    Keywords: microemulsion ; polymerization ; methyl methacrylate ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Polymerization of methyl methacrylate (MMA) has been studied in ternary microemulsions which were stabilized by tetradecyltrimethylammonium bromide (TTAB) or stearyltrimethylammonium chloride (STAC). The sizes of MMA-swollen polymer particles (Rh) increased continuously during polymerization. This is in contrast to that of the styrene system, where Rh increased very rapidly to a maximum and then decreased continuously towards a constant value. The continuous growth of PMMA particles at 60°C are discussed. The stability of PMMA latexes increased with increasing the hydrophobic chain length of the cationic surfactant used. Traces of the coagulations of PMMA particles in the TTAB system can be seen from TEM. © 1995 John Wiley & Sons, Inc.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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