ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The use of energetic (average energy (approximately-equal-to)18 eV), rather than thermal ((approximately-equal-to)0.2 eV), Si beams during deposition at R=1 A(ring) s−1 was found to increase the Si(001) epitaxial thickness te (100 A(ring)–1.2 μm) by up to an order of magnitude over the growth temperature range Ts=80–300 °C. The overall increase in te is attributed primarily to a more effective filling of interisland trenches which form during growth in the low adatom mobility two-dimensional multilayer mode and provide preferential sites for the nucleation of the terminal amorphous phase. In addition, the behavior of te(Ts) at constant R and te(R) at constant Ts is quite different than that reported for films grown by molecular-beam epitaxy. A decrease in the slope of ln(te) versus −1/Ts at Ts〈225 °C indicates an additional increase in the epitaxial thickness at very low growth temperatures while at constant Ts, 150 °C, te increases with decreasing R, reaches a maximum, and then decreases. These latter effects are explained in terms of changes in average island sizes giving rise to corresponding changes in interlayer mass transport. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112423
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