ISSN:
1089-7690
Source:
AIP Digital Archive
Topics:
Physics
,
Chemistry and Pharmacology
Notes:
The reaction of Cl2 with GaAs(110) is studied with soft x-ray photoelectron spectroscopy (SXPS). The temperature dependence of the surface product distribution, in the range of 300–650 K, is derived from SXPS core-level and valence-band spectra and compared to known gas-phase product distributions. It is found that both Ga and As chlorides are formed at room temperature. Following reaction at temperatures above ∼400 K, no Cl remains on the surface. Instead, for temperatures up to ∼600 K an As overlayer is formed, whereas reaction at ∼650 K leads to the stoichiometric removal of Ga and As. These findings indicate that there is a direct correlation between the surface and gas-phase product distributions. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.470903
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