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  • 1
    Electronic Resource
    Electronic Resource
    Low-frequency resonant Raman scattering in AlAs-GaAs atomic-layer superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1614-1616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New Raman lines are observed at the lowest ever frequencies in (AlAs)1(GaAs)n (n=1,2,3) atomic-layer superlattices under band-gap resonant excitation at low temperature. These lines appear in the 30–60 cm−1 region and their intensity is resonantly enhanced as the excitation photon energy approaches the photoluminescence peak energy. Analyses using the elastic continuum model indicate that these lines could be attributed to folded transverse acoustic phonons near the Brillouin-zone edge of the superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99928
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Vibrational spectra of polysilane alloys (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4658-4661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared (IR) absorption and Raman spectra are measured for glow-discharge-produced, wide-optical-gap binary Si:H alloys containing a number of polysilane (SiH2)n groups (polysilane alloys). The highly resolved IR stretching band revealed double peaks, at 2100 and 2122 cm−1, which correspond to an exterior SiH2 and an interior SiH2, respectively, in a 3/4 Si(SiH2)nSi 3/4 group. This result provides evidence for the existence of (SiH2)n (n≥3) groups. Nonlinearity of the (SiH2)n wagging absorption strength with the number of SiH2 units in the alloy is observed in the IR spectra. This is related to a change in the polymerization degree of a (SiH2)n chain. Raman scattering intensity in the 50–400 cm−1 range is lower than that for conventional hydrogenated amorphous silicon alloys, suggesting a reduction in the number of Si loops arising from (SiH2)n chain formations. The change in the polymerization degree as a function of substrate temperature during deposition and the annealing temperature are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336238
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence from ultrashort-period AlAs-GaAs atomic-layer superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6481-6485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence for (AlAs)n(GaAs)n (n=1, 2, 3, and 4) ultrashort-period superlattices grown by flow-rate modulation epitaxy is analyzed at various temperatures between 4.6 and 300 K. An excitonic intense emission line caused by an indirect transition is observed at low temperatures. Another emission band, caused by a direct transition, appears at elevated temperatures. The results of photoluminescence excitation spectroscopy reveal that the superlattices have an indirect minimum band gap. The direct and indirect band-gap energies of these superlattices, with periods of up to 1 monolayer, are presented. A simple Kronig–Penney calculation shows relatively good agreement with the experimental results for direct transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345123
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    Paper (German National Licenses)
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