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  • 1
    Electronic Resource
    Electronic Resource
    Treatment of soft threshold in impact ionization (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2538-2543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The avalanche multiplication and excess noise properties of a range of submicron Si diodes have been measured and analyzed using a model for impact ionization which includes the effect of dead space, modified to allow for a gradual onset of ionization, with realistic threshold energies. Good agreement is achieved between the predictions of this "soft dead space" model and measurements of multiplication and excess noise, both on a range of submicron diodes with uniform electric fields and also on a p+n diode with a highly nonuniform electric field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388865
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Impact ionization coefficients of Al0.8Ga0.2As (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4374-4376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact ionization coefficients in bulk Al0.8Ga0.2As have been determined from photomultiplication measurements over the electric field range of 328–519 kV/cm. Unlike in AlxGa1−xAs (x≤0.6), where the electron to hole ionization coefficients ratios (1/k) are less than 2, the 1/k value in Al0.8Ga0.2As was found to be greater than 10. Excess noise measurements corroborated the multiplication results, suggesting that this material may be a suitable multiplication medium for low noise avalanche photodiodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336556
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Avalanche noise measurement in thin Si p+-i-n+ diodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3926-3928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The avalanche multiplication and excess noise properties of a range of submicron Si diodes have been investigated. In these thin diodes the excess noise is found to fall below that predicted by conventional local noise theory. Modeling of the multiplication and excess noise using a recurrence method, which includes the dead space for carrier ionization, gives good agreement with experiment. This suggests that the dead space can reduce the excess noise in submicron Si diodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126823
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    Paper (German National Licenses)
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