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Effects of ambient gas pressure on (1−x) SrTiO3-xBaTiO3 films prepared by pulsed laser deposition (1996)

Tseng, Tzu-Feng ; Yeh, Ming-Hua ; Liu, Kuo-Shung ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 4984-4989

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Ambient gas pressure in pulsed laser deposition process has been observed to significantly modify the lattice parameters of (Sr1−xBax)TiO3 thin films. The lattice parameters a0 of the films deposited under low ambient pressure regime (P≤0.01 mbar) were larger than those found on the films grown under high ambient pressure regime (P≥0.1 mbar), regardless of the thin film composition (i.e., x value), substrate materials (Pt/Si or Si), or ambient gas species (O2 or N2). It is proposed from these observations that the large lattice parameters a0 of the films grown under low-pressure environment result from higher concentration of vacancies, which, in turn, are induced by the bombardment of energetic species ejected by laser beams. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.363464

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Improvement of (Pb1−xLax)(ZryTi1−y)1−x/4O3 ferroelectric thin films by use of SrRuO3/Ru/Pt/Ti bottom electrodes (1998)

Liu, Kuo-Shung ; Tseng, Tzu-Feng

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 1182-1184

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: This work deposits (Pb1−xLax)(ZryTi1−y)1−x/4O3 (PLZT) thin films, possessing good ferroelectric properties (Pr=14.4 μC/cm2), on Pt/Ti/SiO2/Si substrates, using SrRuO3 perovskite as bottom electrodes. Precoating a metallic Ru layer on Pt/Ti/SiO2/Si substrates prior to depositing SrRuO3 bottom electrode further improves the film electrical properties. The optimum ferroelectric properties achieved are Pr=25.6 μC/cm2, Ec=47.1 kV/cm, and εr=1204. Analyzing the elemental depth profiles using secondary ions mass spectroscopy reveals that the presence of the metallic Ru layer effectively suppresses the outward diffusion of Ti and Si species. The interdiffusion between the SrRuO3 layer and the subsequently deposited PLZT is also substantially reduced, an effect that is presumed to be the primary factor in improving ferroelectric properties for PLZT thin films. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121007

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Ferroelectric properties of (Pb0.97La0.03)(Zr0.66Ti0.34)0.9875O3 films deposited on Si3N4-coated Si substrates by pulsed laser deposition process (1997)

Tseng, Tzu-Feng ; Yang, Rong-Pyng ; Liu, Kuo-Shung

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 70 (1997), S. 46-48

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: (Pb0.97La0.03)(Zr0.66Ti0.34)0.9875O3, PLZT, thin films deposited on either LaNiO3 (LNO) or LNO/Pt coated Si3N4/Si substrates, possessing good ferroelectric properties, were successfully obtained by the pulsed laser deposition process. Using LNO/Pt as double layer electrodes not only resulted in PLZT films with superior electric properties, but also of better handling endurance. The former is attributed to the low surface resistivity of electrode materials (i.e., ρLNO/Pt=0.5 mΩ cm) due to the bypassing effect of the Pt layer, whereas the latter is ascribed to the induction of compressive stress on PLZT and LNO layers due to a relatively larger thermal expansion coefficient (CTE) of the Pt layer. The ferroelectric properties of (PLZT )LNO/pt films were Pr=16.5 μC/cm2 and Ec=63.5 kV/cm, while the dielectric constant and leakage current were K=1.028 and Je≤8×10−6 A/cm2 (under 150 kV/cm), respectively. Their fatigue life was longer than 2×109cycles under action of 300 kV/cm pulse. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.119300

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Effect of LaNiO3/Pt double layers on the characteristics of (PbxLa1−x)(ZryTi1−y)O3 thin films (1996)

Tseng, Tzu-Feng ; Liu, Kuo-Shung ; Wu, Tai-Bar ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 2505-2510

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Characteristics of LaNiO3 (LNO) thin films deposited by rf sputtering process were compared with that prepared by pulsed laser deposition (PLD) process. rf sputtered LNO films were [200] preferentially oriented with a low surface resistivity (ρs=0.55 mΩ cm) and the PLD deposited films were [110] predominated with a slightly larger surface resistivity (ρs=6.38 mΩ cm). Using Pt coating as underneath layer markedly reduced the surface resistivity (ρs=0.05 mΩ cm) without modifying the texture characteristics of the LNO layers. PLZT films subsequently deposited on LNO layers inherited the texture characteristics of the underlying LNO layers. Ferroelectric properties of PLZT films were optimized when using LNO–Pt double layers as bottom electrodes. The remanent polarization and coercive force obtained were Pr=14.9 μC/cm2 and Ec=3.5 kV/cm, respectively. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115836

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Growth behavior of pulsed-laser-deposited PLZTO thin films (1997)

Tseng, Tzu-Feng ; Liu, Kuo-Shung ; Lin, I-Nan ; [et al.]

Hoboken, NJ : Wiley-Blackwell

AIChE Journal 43 (1997), S. 2857-2864

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ISSN: 0001-1541

Keywords: Chemistry ; Chemical Engineering

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology

Notes: Elemental depth profile examined using secondary-ion mass spectroscopy and structural profile examined using grazing-incident X-ray diffractometry were applied to analyze the growth behavior of Pb1-xLax(ZryTi1-y)O3 (PLZTO) and Pb1-xLaxTiO3 (PLTO) thin films deposited on a Si substrate. When deposited under a suitably high substrate temperature, the chamber's oxygen pressure was observed to substantially influence the structure of the films. Low oxygen pressures (PO2 〈 0.01 mbar) deteriorate crystal structure without altering the composition of the films. Deposition of a buffer layer enhanced the formation kinetics of PLZTO and PLTO films. However, sufficiently thick SrTiO3 (∼500 nm) layer was required to achieve this effect. Using (La0.5Sr0.5)CoO3/Pt materials as double-layer electrodes not only prevented the film-to-substrate interaction, but resulted in preferentially oriented thin films. Ferroelectric properties of the films were thus greatly improved, with remanent polarization (Pr) around 14 ∼ 16 μC/cm2, coercive force (Ec) around 50 ∼ 60 kV/cm, and relative dielectric constant (ε) around 900 ∼ 1,000.

Additional Material: 9 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/aic.690431335

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