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  • 1
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a low-noise, high-sensitivity charge-coupled-device (CCD) technology for imaging applications extending from the soft x-ray (1 A(ring)) to the near-infrared (10 000 A(ring)) regimes. We have also developed a fabrication technology for making back-illuminated versions of these devices with quantum efficiencies as high as 90% from 5000 to 7000 A(ring). Our efforts have focused on two devices, a 64×64 pixel back-illuminated imager with two output ports that operates at 2000 frames per second with 23 electrons read noise, and a larger device, with 420×420 pixel format, designed for lower frame rates with noise as low as 1.5 electrons and used at visible, UV, and x-ray wavelengths. Applications to plasma diagnostics include Thomson scattering and high-frame-rate imaging in the visible, as well as x-ray imaging and bolometry.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1328-1330 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports, diamond field emitters, Cs treated, air stable, that emit electrons at the lowest reported field, 〈0.2 V μm−1. Field emission from B-, Li-, P-, and N-doped diamonds and carbonized polymer was characterized as a function of surface treatment. A treated with an O2 plasma, coated with Cs, heated, and exposed to O2 exhibited increased emission for all samples except for B-doped diamond. The best emission was obtained from N-doped diamond samples, followed by carbonized polymer, the Li-doped, and polycrystalline P-doped diamond. Li- and N-doped samples treated with Cs were stable in laboratory air for several days. This stability of the surface-activated diamond is believed to be due to the formation of a diamond–O–Cs salt. If the sample is treated with a H2 plasma instead of an O2 plasma, the Cs-enhanced emission degrades with heat and exposure to O2. Subbands formed by Li and N impurities are believed to be responsible for this enhanced emission. The surface treatment on N-doped diamond results in emission at fields as low as 0.2 V μm−1. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2294-2296 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission of electrons from boron- and nitrogen-doped diamond is compared. Emission from boron-doped diamond requires vacuum electric fields of 20–50 V μm−1, while nitrogen-doped, type Ib diamond requires fields of 0–1 V μm−1. Since boron-doped diamond is very conductive, very little voltage drop occurs in the diamond during emission. Nitrogen-doped diamond is insulating, so during emission a potential of 1–10 kV appears in the diamond. This potential is a function of the back contact metal-diamond interface. A roughened interface substantially reduces the potential in the diamond and increases emission. The electrons are often emitted from the nitrogen-doped diamond as beamlets. These beamlets leave the surface of the diamond at angles up to 45° from the substrate normal. Although the vacuum field is small, these electrons have energies of several kV. It is unknown whether the electrons are accelerated to these energies in the bulk of the diamond, or at high electric fields near the emitting surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] An electron-emission mechanism for cold cathodes is described based on the enhancement of electric fields at metal–diamond–vacuum triple junctions. Unlike conventional mechanisms, in which electrons tunnel from a metal or semiconductor directly into vacuum, the electrons here tunnel ...
    Type of Medium: Electronic Resource
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