Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 3791-3796
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Properties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen in H+ and 4He+ ion implanted and hydrogen co-deposited DLC films have been studied. Measurements utilizing Rutherford backscattering spectrometry showed that the films studied have an average mass density of 2.6±0.1 g/cm3. The bonding ratio sp3/sp2 is typically 70% measured with the electron spectroscopy for chemical analysis technique. Impurities and their depth distributions were deduced from the particle induced x-ray emission and secondary ion mass spectrometry (SIMS) measurements. Distributions of implanted and co-deposited hydrogen were measured by the nuclear resonance reaction 1H(15N,αγ)12C and SIMS. It was found that annealing behavior of implanted H in DLC has a diffusion like character. The obtained diffusion coefficients resulted in the activation energy of 2.0±0.1 eV. It was observed that in H co-deposited DLC films the temperature of H release varied between 950 and 1070 °C depending on the H concentration. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365741
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