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  • 1
    Electronic Resource
    Electronic Resource
    Identification of vacancy charge states in diffusion of arsenic in germanium (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 690-692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of As into Ge from a GaAs overlayer deposited on p-type Ge substrates has been studied by means of secondary ion mass spectrometry. A concentration-dependent diffusion of As atoms was observed in addition to the concentration-independent diffusion of Ga and As atoms. The concentration dependence is explained by a Fermi-level-dependent diffusion model. Arsenic atoms are shown to diffuse through Ge vacancies with the charge states 2− and 0. No presence of the singly negatively charged vacancies was observed, indicating that Ge vacancy could be a negative U center. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127087
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Concentration of interstitial and substitutional nitrogen in GaNxAs1−x (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2314-2316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interstitial to substitutional nitrogen atoms as a function of concentration in GaNAs were determined by nuclear reaction analysis utilizing the 14N(d,p)15N and 14N(d,α)12C reactions using ion channeling technique. The GaNAs films with mean nitrogen concentration between 0.3% and 3%, measured with secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis, were grown using gas-source molecular-beam epitaxy. The fraction of nitrogen atoms occupying substitutional sites was observed to increase linearly with increasing nitrogen amount, while the concentration of interstitial nitrogen was nearly constant at 2×1019 cm−3 throughout the concentration region. Annealing at 750 °C decreases the concentration of interstitial nitrogen. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465522
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    Paper (German National Licenses)
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