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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6946-6952 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting, silver-doped films of Y1Ba2Cu3O7−δ have been deposited by spray pyrolysis of aqueous nitrate solutions onto MgO substrates. The superconducting transport properties, microstructure, and microwave losses have been characterized for various amounts of AgNO3 added to the spraying solution. These films had resistive transition temperatures between 79 and 85 K with widths from 3 to 7 K. The room-temperature resistivity was a strong function of the silver doping, dropping by a factor of 50 for the heavily doped films. Critical current densities at 4 K were typically several 103 A/cm2 with little correlation to the silver doping. Lattice constants also were not significantly affected by the silver doping level, however, lightly doped films were denser, had the strongest c axis preferred orientation, and a smoother surface. Rf surface resistance was measured at 18 GHz, and for the best films dropped a factor of 10 below copper by 40 K. The London penetration depth was estimated to be approximately 1 μm for the best films.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1878-1884 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoresponse of Y1Ba2Cu3O7−x step, weak-link devices on MgO substrates has been measured using a He-Ne laser light source. The temperature and magnetic-field dependencies of the device critical current density were investigated. Single-step and multistep devices were fabricated and found to have a bolometric response in the resistive region and weak-link, video-detection response in the superconducting region. These devices are suitable for operation over a wide range of temperatures from 4 to 90 K. Responsivities greater than 1000 V/W were measured at low temperature for some devices.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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