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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3345-3355 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The factors determining the x-ray sensitivity of HgI2 and PbI2 as direct detector materials for large area matrix addressed x-ray image sensors are described, along with a model to explain their different properties. The imaging studies are made on test arrays with 512×512 pixels of size 100 μm. The x-ray sensitivity and spatial resolution are reported, along with measurements of the various mechanisms that influence the sensitivity, such as charge collection, x-ray absorption, fill factor, and image lag. The spatial resolution of PbI2 decreases with increasing film thickness, but this effect is not observed in HgI2. The x-ray response data are used to compare the sensitivity to the theoretical values for the ionization energy and to identify the various loss mechanisms. We find that the sensitivity of HgI2 can be explained by a few small and well characterized loss factors. This material exhibits good spatial resolution, high fill factor, and high charge collection. PbI2 films exhibit lower sensitivity, principally attributable to a very large image lag. We propose that the x-ray response of the two materials is distinguished by their different depletion layer properties, and present a model that accounts for the sensitivity, image lag, and spatial resolution of PbI2. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8193-8201 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies are reported of the image-blur effects caused by lateral crosstalk between neighboring pixels of large-area amorphous silicon (a-Si:H) image sensors. Data are obtained from high fill factor sensor arrays using 512×512 pixels of 75 μm size and a pixel gap of 10 μm. Measurements of the line-spread function determine the charge transfer from the illuminated pixel to neighboring ones along both array orientations, and for different samples and operating conditions. The lateral conduction is attributed to three effects: conduction along the interface between the a-Si:H film and the underlying passivation; field-dependent electron injection at the edge of the sensor; and field enhancement of the interface conduction due to the bias applied to the address lines. We show that the crosstalk can be controlled by the choice of operating conditions and optimization of the materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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