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Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides (1996)

Vartuli, C. B. ; MacKenzie, J. D. ; Lee, J. W. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 3705-3709

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Electron-cyclotron-resonance (ECR) and reactive ion etching (RIE) rates for GaN, AlN, InN, and InGaN were measured using the same reactor and plasma parameters in Cl2/Ar or CH4/H2/Ar plasmas. The etch rates of all four materials were found to be significantly faster for ECR relative to RIE conditions in both chemistries, indicating that a high ion density is an important factor in the etch. The ion density under ECR conditions is ∼3×1011 cm−3 as measured by microwave interferometry, compared to ∼2×109 cm−3 for RIE conditions, and optical emission intensities are at least an order of magnitude higher in the ECR discharges. It appears that the nitride etch rates are largely determined by the initial bond breaking that must precede etch product formation, since the etch products are as volatile as those of conventional III–V materials such as GaAs, but the etch rates are typically a factor of about 5 lower for the nitrides. Cl2/Ar plasmas were found to etch GaN, InN, and InGaN faster than CH4/H2/Ar under ECR conditions, while AlN was etched slightly faster in CH4/H2/Ar plasmas. The surface morphology of InN was found to be the most sensitive to changes in plasma parameters and was a strong function of both rf power and etch chemistry for ECR etching. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.363320

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2

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ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides (1996)

Vartuli, C. B. ; Pearton, S. J. ; Lee, J. W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 1426-1428

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Electron cyclotron resonance plasma etch rates for GaN, InN, InAlN, AlN, and InGaN were measured for a new plasma chemistry, ICl/Ar. The effects of gas chemistry, microwave and rf power on the etch rates for these materials were examined. InN proved to be the most sensitive to the plasma composition and ion density. The GaN, InN, and InGaN etch rates reached ∼13 000, 11 500, and ∼7000 A(ring)/min, respectively, at 250 W rf (−275 V dc) and 1000 W microwave power. The etched surface of GaN was found to be smooth, with no significant preferential loss of N from the surface at low rf powers, and no significant residue on the surface after etching. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117603

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Ion implantation doping and isolation of GaN (1995)

Pearton, S. J. ; Vartuli, C. B. ; Zolper, J. C. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 1435-1437

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: N- and p-type regions have been produced in GaN using Si+ and Mg+/P+ implantation, respectively, and subsequent annealing at ∼1100 °C. Carrier activation percentages of 93% for Si and 62% for Mg were obtained for implant doses of 5×1014 cm−2 of each element. Conversely, highly resistive regions ((approximately-greater-than)5×109 Ω/(D'Alembertian)) can be produced in initially n- or p- type GaN by N+ implantation and subsequent annealing at ∼750 °C. The activation energy of the deep states controlling the resistivity of these implant-isolated materials is in the range 0.8–0.9 eV. These process modules are applicable to the fabrication of a variety of different GaN-based electronic and photonic devices. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114518

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High temperature electron cyclotron resonance etching of GaN, InN, and AlN (1995)

Shul, R. J. ; Kilcoyne, S. P. ; Hagerott Crawford, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1761-1763

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl2/H2/CH4/Ar and Cl2/H2/Ar plasmas. Using Cl2/H2/CH4/Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 °C and then increase to a maximum of 2340 A(ring)/min at 170 °C. The InN etch rate decreases monotonically from 30 to 150 °C and then rapidly increases to a maximum of 2300 A(ring)/min at 170 °C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A(ring)/min at 30 °C. When CH4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III–V nitrides remains unchanged after exposure to the Cl2/H2/CH4/Ar plasma over the temperatures studied. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113359

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Nitrogen and fluorine ion implantation in InxGa1−xN (1995)

Zolper, J. C. ; Pearton, S. J. ; Abernathy, C. R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 3042-3044

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Implantation of N+ ions in n-type InxGa1−xN (0.37≤x≤1.0) produces maximum increases in sheet resistance of 50–100 times upon annealing in the range of 400–600 °C. The dominant deep state introduced by implantation and annealing have ionization energies of ∼0.35–0.39 eV and therefore are relatively high in the band gap of the InGaN. There was no evidence for chemical deep levels associated with the implanted N+ or F+. The implant isolation behavior of n-type InGaN appears analogous to that of InP and InGaAs. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114271

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