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  • 1
    Electronic Resource
    Electronic Resource
    Low resistivity cubic phase CdS films by chemical bath deposition technique (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1278-1280 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on cubic CdS thin films with low resistivity by chemical bath deposition (CBD) technique and subsequent annealings in S2 and H2+In. Low temperature photoluminescence, x rays, and transmission spectra support the assumption that S2 annealings contribute to fill the vacancies in the as-deposited films leading to an enlargement of the CdS cubic cell. This fact is revealed by an increase in interplanar distances, evanescence of the PL red broad band, and decrease in band-gap energies. Cubic phase remains after H2+In annealing at higher temperatures. A resistivity as low as 11 Ω cm was obtained at an optimum annealing temperature of 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112094
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  • 2
    Electronic Resource
    Electronic Resource
    Origin and control of the lead-enriched near-surface region of (Pb, La)TiO3 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2037-2039 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition, structure and extension of the Pb-enriched nonferroelectric near-surface region of stoichiometric (Pb, La)TiO3 ferroelectric films was characterized by x-ray diffraction, Rutherford backscattering spectroscopy and x-ray photoemission spectroscopy. Its origin as a result of the Pb excess segregation from the growing (Pb, La)TiO3 bulk and subsequent oxidation was revealed. A postdeposition procedure to control its composition and thereby its properties was provided. Thus, a decrease of the near-surface Pb excess of about 75% was achieved. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359484
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  • 3
    Electronic Resource
    Electronic Resource
    Growth atomic mechanisms of pulsed laser deposited La modified- $\mathsf{PbTiO_3}$ perovskites (2003)
    Springer
    The European physical journal 35 (2003), S. 49-55 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. The microstructure and morphology of 100/001-oriented La modified-PbTiO3 (PLT) films grown by pulsed laser deposition have been analyzed and elucidated within the framework of morphology evolution models, such as the Dynamic Scaling Theory and Structure Zone Model. The experimental results were obtained from X-ray diffraction, atomic force microscopy and cross-section scanning electron microscopy. PLT grows with a compact columnar microstructure. The columns are formed by coherently grouped grains and show oblique walls and rounded tops. Connecting the experimental results with the morphology evolution models, the growth mechanisms involved in the deposition process were identified. While inside each column, the existing Pb vacancies govern the coarsening and coalescence of the grains, a non-local effect of geometric shadowing of the incident particle flux during growth controls competition between columns and their coarsening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epjb/e2003-00255-7
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  • 4
    Electronic Resource
    Electronic Resource
    Piezoelectric Pb0.7La0.2TiO3 prepared by pulsed laser deposition on (100)InP (1999)
    Springer
    Applied physics 69 (1999), S. S827 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Fg; 81.15.Np; 77.84.Dy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. La-modified PbTiO3 (PLT) thin films have been deposited by pulsed laser deposition on (100)InP substrates. The nominal target composition was selected to optimize piezoelectric properties of the material. It is shown that PLT deposition on as-received InP produces amorphous PLT films because of the presence of a native oxide on the substrate. PLT films deposited on bare InP have poor adhesion as a result of the surface reoxidation of the substrate due to the high oxygen pressure required for the deposition of stoichiometric PLT. To prevent substrate oxidation, several buffer oxides (CeO2, ZrO2, SrO, Y-stabilized ZrO2, MgO, and SrTiO3) have been grown in vacuum on (100)InP. Highest-quality heteroepitaxy was found with Y-stabilized ZrO2 (YSZ), being 〈100〉{100} YSZ∥〈100〉{100}  InP oriented. The PLT deposited on this buffer layer is oriented with the [101] direction perpendicular to the substrate surface plane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051540
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  • 5
    Electronic Resource
    Electronic Resource
    Preferential orientation of modified SrBi2Nb2O9 ferroelectric thin films prepared by pulsed laser deposition (1999)
    Springer
    Applied physics 69 (1999), S. S833 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.15.Fg; 77.90.+k; 85.50.+k
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. We report on the deposition of SrBi2Nb2O9 and Sr1-xNaxBi2-xTexNb2O9 ferroelectric thin films on Pt/TiO2/SiO2/(100)Si substrates using the pulsed laser deposition technique. Deposition on substrates heated to 600–700 °C produces {11l} film texture and dense films with grain sizes up to about 500 nm. The recrystallization at 700 °C of amorphous films deposited at lower temperatures enhances the contribution of the {100} and {010} orientations. These films show smaller grain size, namely 50–100 nm. {11l}-oriented Sr1-xNaxBi2-xTexNb2O9 films have remnant polarization Pr≃4 μC/cm2, a coercive field Ec≃60 kV/cm and dielectric constant, ε≃300. The low value of Pr is probably related to the low fraction of grains with the ferroelectric axis in the direction of the applied field, E. The recrystallized films have more grains with the ferroelectric axis parallel to E; however, they have a low resistivity which so far has prevented electrical characterization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051541
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    Paper (German National Licenses)
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